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Volumn 1991-January, Issue , 1991, Pages 567-570
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A low-temperature ( a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BICMOS TECHNOLOGY;
ELECTRON DEVICES;
FIELD EFFECT TRANSISTORS;
GERMANIUM;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTING SILICON;
SILICON ALLOYS;
TEMPERATURE;
THIN FILMS;
ANNEAL TEMPERATURES;
CHEMICAL VAPOR DEPOSITED;
FABRICATION PROCESS;
LARGE-AREA ELECTRONICS;
POLY-SI TFT TECHNOLOGY;
POLYCRYSTALLINE SILICON GERMANIUMS;
PROCESS TEMPERATURE;
THIN-FILM TRANSISTOR (TFTS);
THIN FILM TRANSISTORS;
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EID: 84954134782
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1991.235406 Document Type: Conference Paper |
Times cited : (51)
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References (0)
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