Elimination of Parasitic Bipolar-Induced Breakdown Effects in Ultra-Thin SOI MOSFET's Using Narrow-Bandgap-Source (NBS) Structure

IEEE Transactions on Electron Devices

Volumn 42, Issue 8, 1995, Pages 1495-1502

  Sim, Jai hoon ^a   Choi, Chang Hoon ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

ELECTRON DIFFUSION CONSTANT; NARROW BANDGAP SOURCE STRUCTURE; PARASITIC BIPOLAR INDUCED BREAKDOWN EFFECT; ULTRA THIN SOI DEVICES; VALENCE BAND;

MOSFET DEVICES;

EID: 0029359688     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.398664     Document Type: Article

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