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Volumn ED-24, Issue 10, 1977, Pages 1249-1255

Frequency and Temperature Tests for Lateral Nonuniformities in MIS Capacitors

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS - TESTING;

EID: 0017547758     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1977.18988     Document Type: Article
Times cited : (28)

References (21)
  • 1
    • 9144248729 scopus 로고
    • Apparent interface state density introduced by the spatial fluctuations of surface potential in an MOS structure
    • Oct.
    • R. Castagne and A. Vapaille, “Apparent interface state density introduced by the spatial fluctuations of surface potential in an MOS structure,” Electron. Lett., vol. 6, pp. 691–694, Oct. 1970.
    • (1970) Electron. Lett. , vol.6 , pp. 691-694
    • Castagne, R.1    Vapaille, A.2
  • 2
    • 0015434838 scopus 로고
    • Nonuniform lateral ionic impurity distributions at Si-SiO2 interfaces
    • Nov.
    • D. J. Silversmith, “Nonuniform lateral ionic impurity distributions at Si-SiO2 interfaces,” J. Electrochem. Soc., vol. 119, pp. 1589–1593, Nov. 1972.
    • (1972) J. Electrochem. Soc. , vol.119 , pp. 1589-1593
    • Silversmith, D.J.1
  • 3
    • 0001188528 scopus 로고
    • An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
    • Sept.–Oct.
    • L. M. Terman, “An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes,” Solid-State Electron., vol. 5, pp. 285–299, Sept.–Oct. 1962.
    • (1962) Solid-State Electron. , vol.5 , pp. 285-299
    • Terman, L.M.1
  • 4
    • 0002956604 scopus 로고
    • Density of SiO2-Si interface states
    • Jan. 15
    • P. V. Gray and D. M. Brown, “Density of SiO2-Si interface states,” Appl. Phys. Lett., vol. 8, pp. 31–33, Jan. 15, 1966.
    • (1966) Appl. Phys. Lett. , vol.8 , pp. 31-33
    • Gray, P.V.1    Brown, D.M.2
  • 5
    • 84896741951 scopus 로고
    • Surface states at steam-grown silicon-silicon dioxide interfaces
    • Oct.
    • C. N. Berglund, “Surface states at steam-grown silicon-silicon dioxide interfaces,” IEEE Trans. Electron Devices, vol. ED-13, pp. 701–705, Oct. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 701-705
    • Berglund, C.N.1
  • 6
    • 84939383977 scopus 로고
    • The Si-SiO2 interface—electrical properties as determined by the metal-insulator-silicon conductance technique
    • July–Aug.
    • E. H. Nicollian and A. Goetzberger, “The Si-SiO2 interface—electrical properties as determined by the metal-insulator-silicon conductance technique,” Bell Syst. Tech. J., vol. XLVI, pp. 1055–1133, July–Aug. 1967.
    • (1967) Bell Syst. Tech. J. , vol.46 , pp. 1055-1133
    • Nicollian, E.H.1    Goetzberger, A.2
  • 7
    • 0014805372 scopus 로고
    • A quasi-static technique for MOS C-V and surface state measurement
    • June
    • M. Kuhn, “A quasi-static technique for MOS C-V and surface state measurement,” Solid-State Electron., vol. 13, pp. 873–885, June 1970.
    • (1970) Solid-State Electron. , vol.13 , pp. 873-885
    • Kuhn, M.1
  • 8
    • 0001414860 scopus 로고
    • Description of the SiO2-Si interface properties by means of very low frequency MOS capacitance measurements
    • Nov.
    • R. Castagne and A. Vapaille, “Description of the SiO2-Si interface properties by means of very low frequency MOS capacitance measurements,” Surf. Sci., vol. 28, pp. 157–193, Nov. 1971.
    • (1971) Surf. Sci. , vol.28 , pp. 157-193
    • Castagne, R.1    Vapaille, A.2
  • 9
    • 0015683169 scopus 로고
    • A test for lateral nonuniformities in MOS devices using only capacitance curves
    • Nov.
    • J. R. Brews and A. D. Lopez, “A test for lateral nonuniformities in MOS devices using only capacitance curves,” Solid-State Electron., vol. 16, pp. 1267–1277, Nov. 1973.
    • (1973) Solid-State Electron. , vol.16 , pp. 1267-1277
    • Brews, J.R.1    Lopez, A.D.2
  • 10
    • 84936904126 scopus 로고
    • Study of lateral nonuniformities and interface states in MIS structures
    • Ph.D. dissertation, Princeton University, Feb.
    • C. C. Chang, “Study of lateral nonuniformities and interface states in MIS structures,” Ph.D. dissertation, Princeton University, Feb. 1976.
    • (1976)
    • Chang, C.C.1
  • 11
    • 36849110489 scopus 로고
    • Admittance of an MOS device with interface charge inhomogeneities
    • Aug.
    • J. R. Brews, “Admittance of an MOS device with interface charge inhomogeneities,” J. Appl. Phys. vol. 43, pp. 3451–3455, Aug. 1972.
    • (1972) J. Appl. Phys. , vol.43 , pp. 3451-3455
    • Brews, J.R.1
  • 12
    • 84936904127 scopus 로고
    • Investigation of the properties of MIS and MNOS structures
    • Ph.D. dissertation, Princeton University, Mar.
    • N. Gordon, “Investigation of the properties of MIS and MNOS structures,” Ph.D. dissertation, Princeton University, Mar. 1974.
    • (1974)
    • Gordon, N.1
  • 13
    • 33748621800 scopus 로고
    • Statistics of the recombination of holes and electrons
    • Sept. 1
    • W. Shockley and W. T. Read, “Statistics of the recombination of holes and electrons,” Phys. Rev., vol. 87, pp. 835–842, Sept. 1, 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 835-842
    • Shockley, W.1    Read, W.T.2
  • 14
    • 0002927372 scopus 로고
    • Impedance of semiconductor-insulator-metal capacitors
    • Jan.
    • K. Lehovec and A. Slobodskoy, “Impedance of semiconductor-insulator-metal capacitors,” Solid State Etectron., vol. 7, pp. 59–79, Jan. 1964.
    • (1964) Solid State Etectron. , vol.7 , pp. 59-79
    • Lehovec, K.1    Slobodskoy, A.2
  • 15
    • 0001813471 scopus 로고
    • Frequency dependence of the impedance of distributed surface states in MOS structures
    • Jan. 15
    • K. Lehovec, “Frequency dependence of the impedance of distributed surface states in MOS structures,” Appl. Phys. Lett., vol. 8, pp. 48–50, Jan. 15, 1966.
    • (1966) Appl. Phys. Lett. , vol.8 , pp. 48-50
    • Lehovec, K.1
  • 17
    • 0000550322 scopus 로고
    • The effect of oxide traps on the MOS capacitance
    • Apr.
    • F. P. Heiman and G. Warfield, “The effect of oxide traps on the MOS capacitance,” IEEE Trans. Electron. Devices, vol. ED-12, pp. 167–178, Apr. 1965.
    • (1965) IEEE Trans. Electron. Devices , vol.ED-12 , pp. 167-178
    • Heiman, F.P.1    Warfield, G.2
  • 18
    • 0004259365 scopus 로고
    • Contributions of surface states to MOS impedance
    • June 15
    • H. Preier, “Contributions of surface states to MOS impedance,” Appl. Phys. Lett., vol. 10, pp. 361–363, June 15, 1967.
    • (1967) Appl. Phys. Lett. , vol.10 , pp. 361-363
    • Preier, H.1
  • 19
    • 84916577876 scopus 로고
    • Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping
    • Dec.
    • A. Goetzberger and J. C. Irwin, “Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping,” IEEE Trans. Electron Devices, vol. ED-15, pp. 1009–1014, Dec. 1968.
    • (1968) IEEE Trans. Electron Devices , vol.ED-15 , pp. 1009-1014
    • Goetzberger, A.1    Irwin, J.C.2
  • 20
    • 0344181617 scopus 로고
    • Barrier inhomogeneities on a Si-SiO2 interface by scanning internal photoemission
    • Oct. 15
    • T. H. DiStefano, “Barrier inhomogeneities on a Si-SiO2 interface by scanning internal photoemission,” Appl. Phys. Lett., vol. 19, pp. 280–282, Oct. 15, 1971.
    • (1971) Appl. Phys. Lett. , vol.19 , pp. 280-282
    • DiStefano, T.H.1
  • 21
    • 0015413952 scopus 로고
    • Laser-scanning photoemission measurements of the silicon-silicon dioxide interface
    • Oct.
    • R. Williams and M. H. Woods, “Laser-scanning photoemission measurements of the silicon-silicon dioxide interface,” J. Appl. Phys., vol. 43, pp. 4142–4147, Oct. 1972.
    • (1972) J. Appl. Phys. , vol.43 , pp. 4142-4147
    • Williams, R.1    Woods, M.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.