-
1
-
-
9144248729
-
Apparent interface state density introduced by the spatial fluctuations of surface potential in an MOS structure
-
Oct.
-
R. Castagne and A. Vapaille, “Apparent interface state density introduced by the spatial fluctuations of surface potential in an MOS structure,” Electron. Lett., vol. 6, pp. 691–694, Oct. 1970.
-
(1970)
Electron. Lett.
, vol.6
, pp. 691-694
-
-
Castagne, R.1
Vapaille, A.2
-
2
-
-
0015434838
-
Nonuniform lateral ionic impurity distributions at Si-SiO2 interfaces
-
Nov.
-
D. J. Silversmith, “Nonuniform lateral ionic impurity distributions at Si-SiO2 interfaces,” J. Electrochem. Soc., vol. 119, pp. 1589–1593, Nov. 1972.
-
(1972)
J. Electrochem. Soc.
, vol.119
, pp. 1589-1593
-
-
Silversmith, D.J.1
-
3
-
-
0001188528
-
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
-
Sept.–Oct.
-
L. M. Terman, “An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes,” Solid-State Electron., vol. 5, pp. 285–299, Sept.–Oct. 1962.
-
(1962)
Solid-State Electron.
, vol.5
, pp. 285-299
-
-
Terman, L.M.1
-
4
-
-
0002956604
-
Density of SiO2-Si interface states
-
Jan. 15
-
P. V. Gray and D. M. Brown, “Density of SiO2-Si interface states,” Appl. Phys. Lett., vol. 8, pp. 31–33, Jan. 15, 1966.
-
(1966)
Appl. Phys. Lett.
, vol.8
, pp. 31-33
-
-
Gray, P.V.1
Brown, D.M.2
-
5
-
-
84896741951
-
Surface states at steam-grown silicon-silicon dioxide interfaces
-
Oct.
-
C. N. Berglund, “Surface states at steam-grown silicon-silicon dioxide interfaces,” IEEE Trans. Electron Devices, vol. ED-13, pp. 701–705, Oct. 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
, pp. 701-705
-
-
Berglund, C.N.1
-
6
-
-
84939383977
-
The Si-SiO2 interface—electrical properties as determined by the metal-insulator-silicon conductance technique
-
July–Aug.
-
E. H. Nicollian and A. Goetzberger, “The Si-SiO2 interface—electrical properties as determined by the metal-insulator-silicon conductance technique,” Bell Syst. Tech. J., vol. XLVI, pp. 1055–1133, July–Aug. 1967.
-
(1967)
Bell Syst. Tech. J.
, vol.46
, pp. 1055-1133
-
-
Nicollian, E.H.1
Goetzberger, A.2
-
7
-
-
0014805372
-
A quasi-static technique for MOS C-V and surface state measurement
-
June
-
M. Kuhn, “A quasi-static technique for MOS C-V and surface state measurement,” Solid-State Electron., vol. 13, pp. 873–885, June 1970.
-
(1970)
Solid-State Electron.
, vol.13
, pp. 873-885
-
-
Kuhn, M.1
-
8
-
-
0001414860
-
Description of the SiO2-Si interface properties by means of very low frequency MOS capacitance measurements
-
Nov.
-
R. Castagne and A. Vapaille, “Description of the SiO2-Si interface properties by means of very low frequency MOS capacitance measurements,” Surf. Sci., vol. 28, pp. 157–193, Nov. 1971.
-
(1971)
Surf. Sci.
, vol.28
, pp. 157-193
-
-
Castagne, R.1
Vapaille, A.2
-
9
-
-
0015683169
-
A test for lateral nonuniformities in MOS devices using only capacitance curves
-
Nov.
-
J. R. Brews and A. D. Lopez, “A test for lateral nonuniformities in MOS devices using only capacitance curves,” Solid-State Electron., vol. 16, pp. 1267–1277, Nov. 1973.
-
(1973)
Solid-State Electron.
, vol.16
, pp. 1267-1277
-
-
Brews, J.R.1
Lopez, A.D.2
-
10
-
-
84936904126
-
Study of lateral nonuniformities and interface states in MIS structures
-
Ph.D. dissertation, Princeton University, Feb.
-
C. C. Chang, “Study of lateral nonuniformities and interface states in MIS structures,” Ph.D. dissertation, Princeton University, Feb. 1976.
-
(1976)
-
-
Chang, C.C.1
-
11
-
-
36849110489
-
Admittance of an MOS device with interface charge inhomogeneities
-
Aug.
-
J. R. Brews, “Admittance of an MOS device with interface charge inhomogeneities,” J. Appl. Phys. vol. 43, pp. 3451–3455, Aug. 1972.
-
(1972)
J. Appl. Phys.
, vol.43
, pp. 3451-3455
-
-
Brews, J.R.1
-
12
-
-
84936904127
-
Investigation of the properties of MIS and MNOS structures
-
Ph.D. dissertation, Princeton University, Mar.
-
N. Gordon, “Investigation of the properties of MIS and MNOS structures,” Ph.D. dissertation, Princeton University, Mar. 1974.
-
(1974)
-
-
Gordon, N.1
-
13
-
-
33748621800
-
Statistics of the recombination of holes and electrons
-
Sept. 1
-
W. Shockley and W. T. Read, “Statistics of the recombination of holes and electrons,” Phys. Rev., vol. 87, pp. 835–842, Sept. 1, 1952.
-
(1952)
Phys. Rev.
, vol.87
, pp. 835-842
-
-
Shockley, W.1
Read, W.T.2
-
14
-
-
0002927372
-
Impedance of semiconductor-insulator-metal capacitors
-
Jan.
-
K. Lehovec and A. Slobodskoy, “Impedance of semiconductor-insulator-metal capacitors,” Solid State Etectron., vol. 7, pp. 59–79, Jan. 1964.
-
(1964)
Solid State Etectron.
, vol.7
, pp. 59-79
-
-
Lehovec, K.1
Slobodskoy, A.2
-
15
-
-
0001813471
-
Frequency dependence of the impedance of distributed surface states in MOS structures
-
Jan. 15
-
K. Lehovec, “Frequency dependence of the impedance of distributed surface states in MOS structures,” Appl. Phys. Lett., vol. 8, pp. 48–50, Jan. 15, 1966.
-
(1966)
Appl. Phys. Lett.
, vol.8
, pp. 48-50
-
-
Lehovec, K.1
-
16
-
-
0015331832
-
Interface states in Si-SiO2 interfaces
-
May
-
H. Deuling, E. Klausman, and A. Goetzberger, “Interface states in Si-SiO2 interfaces,” Solid State Electron., vol. 15, pp. 559–571, May 1972.
-
(1972)
Solid State Electron.
, vol.15
, pp. 559-571
-
-
Deuling, H.1
Klausman, E.2
Goetzberger, A.3
-
17
-
-
0000550322
-
The effect of oxide traps on the MOS capacitance
-
Apr.
-
F. P. Heiman and G. Warfield, “The effect of oxide traps on the MOS capacitance,” IEEE Trans. Electron. Devices, vol. ED-12, pp. 167–178, Apr. 1965.
-
(1965)
IEEE Trans. Electron. Devices
, vol.ED-12
, pp. 167-178
-
-
Heiman, F.P.1
Warfield, G.2
-
18
-
-
0004259365
-
Contributions of surface states to MOS impedance
-
June 15
-
H. Preier, “Contributions of surface states to MOS impedance,” Appl. Phys. Lett., vol. 10, pp. 361–363, June 15, 1967.
-
(1967)
Appl. Phys. Lett.
, vol.10
, pp. 361-363
-
-
Preier, H.1
-
19
-
-
84916577876
-
Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping
-
Dec.
-
A. Goetzberger and J. C. Irwin, “Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping,” IEEE Trans. Electron Devices, vol. ED-15, pp. 1009–1014, Dec. 1968.
-
(1968)
IEEE Trans. Electron Devices
, vol.ED-15
, pp. 1009-1014
-
-
Goetzberger, A.1
Irwin, J.C.2
-
20
-
-
0344181617
-
Barrier inhomogeneities on a Si-SiO2 interface by scanning internal photoemission
-
Oct. 15
-
T. H. DiStefano, “Barrier inhomogeneities on a Si-SiO2 interface by scanning internal photoemission,” Appl. Phys. Lett., vol. 19, pp. 280–282, Oct. 15, 1971.
-
(1971)
Appl. Phys. Lett.
, vol.19
, pp. 280-282
-
-
DiStefano, T.H.1
-
21
-
-
0015413952
-
Laser-scanning photoemission measurements of the silicon-silicon dioxide interface
-
Oct.
-
R. Williams and M. H. Woods, “Laser-scanning photoemission measurements of the silicon-silicon dioxide interface,” J. Appl. Phys., vol. 43, pp. 4142–4147, Oct. 1972.
-
(1972)
J. Appl. Phys.
, vol.43
, pp. 4142-4147
-
-
Williams, R.1
Woods, M.H.2
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