Temperature- and field-dependent charge relaxation in Si02 gate insulators

IEEE Transactions on Nuclear Science

Volumn 25, Issue 3, 1978, Pages 1012-1016

  Boesch, H E ^a   McGarrity, J M ^a   McLean, F B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS - RADIATION EFFECTS;

SEMICONDUCTOR CAPACITORS;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0017981560     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1978.4329453     Document Type: Article

References (16)

1. 1. O. L. Curtis, Jr., J. R. Srour, K. Y Chiu, “Hole and Electron Transport in Si02 Films, ” J. Appl. Phys. 45, 4506 (1974).
2. 2. G. A. Ausman, Jr., and F. B. McLean, “Electron-Hole Pair Creation Energy in Si02, ” Appl. Phys. Lett. 26, 173–175 (1975).
3. 3. H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, and G. A. Ausman, Jr., “Hole Transport and Charge Relaxation in Irradiated Si02 MOS Capacitors, ” IEEE Trans. Nucl. Sci. NS-22, No. 6, 2163–2167 (Dec 1975).
4. 4. R. C. Hughes, E. P. EerNisse, and H. J. Stein, “Hole Transport in MOS Oxides, ” IEEE Trans. Nucl. Sci. NS-22, No. 6, 2227–2233 (Dec 1975).
5. 5. R. E. Leadon, D. P. Snowden, and J. M. Wilkenfeld, “Radiation Effects in Semiconductor and Insulator Materials, ” IRT Corporation, Harry Diamond Laboratories CR-76-152-1 (April 1976).
6. 6. H. E. Boesch, Jr., and J. M. McGarrity, “Charge Yield and Dose Effects in MOS Capacitors at 80 K, ” IEEE Trans. Nucl. Sci. NS-23, No. 6, 1520–1525 (Dec 1976). A more complete discussion is available in Harry Diamond Laboratories TR-1806 (May 1977). 7. J. R. Srour, S. Othmer, O. L. Curtis, Jr., and K. Y. Chiu, “Radiation-Induced Charge Transport and Charge Buildup in Si02 Films at Low Temperatures, ” IEEE Trans. Nucl. Sci. NS-23, No. 6, 1513–1519 (Dec 1976). 8. F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, “Hole Transport and Recovery Characteristics of Si02 Gate Insulators, ” IEEE Trans. Nucl. Sci. NS-23, No. 6, 1506–1512 (Dec 1976). NS-23.
7. 9. M. Simons and H. L. Hughes, “Short-term Charge Annealing in Electron-Irradiated Silicon Dioxide, ” IEEE Trans. Nucl. Sci. NS-18, No. 6, 106–112 (Dec 1971).
8. 9. M. Simons and H. L. Hughes, “Short-term Charge Annealing in Electron-Irradiated Silicon Dioxide, ” IEEE Trans. Nucl. Sci. NS-18, No. 6, 106–112 (Dec 1971).
9. 9. M. Simons and H. L. Hughes, “Short-term Charge Annealing in Electron-Irradiated Silicon Dioxide, ” IEEE Trans. Nucl. Sci. NS-18, No. 6, 106–112 (Dec 1971).
10. 10. D. H. Habing and B. D. Shafer, “Room Temperature Annealing of Ionization-Induced Damage in CMOS Circuits, ” IEEE Trans. Nucl. Sci. NS-20, No. 6, 307–314 (Dec 1973).
11. 11. J. C. Pickel and R. A. Williams, “Prompt Radiation Damage and Short Term Annealing in CMOS/SOS Devices, ” IEEE Trans. Nucl. Sci. NS-23, No. 6, 1623–1628 (Dec 1976).
12. 12. R. L. Nielsen and D. K. Nichols, “Total Dose Effects of Ionizing Radiati on MOS Structures at 90 K, ” IEEE Trans. Nucl. Sci. NS-20, No. 6, 319–322 (Dec 1973).
13. 13. J. R. Srour and K. Y. Chiu, “MOS Hardening Approaches for Low-Temperature Applications, ” IEEE Trans. Nucl. Sci. NS-24, No. 6, 2140–2146 (Dec 1977).
14. 14. H. E. Boesch, Jr., “Low Temperature Radiation Response of A1203 Gat e Insulators, ” IEEE Trans. Nucl. Sci. NS-24, No. 6, 2135–2139 (Dec 1977).
15. 15. An earlier form of the apparatus used for these e xperiment s is described in “Development of Apparatus for Performing Rapid Capacitance-Voltage Measurements on MIS Structures, ” Harry Diamond Laboratories TM-76-33 (.Dec 1976).
16. 16. F. B. McLean and G. A. Ausman, Jr., “Simple Approximate Solutions to Continuous-Time Random Walk Transport, ” Phys. Rev. B 15, No.2, 1052–1061 (Jan 1977).