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Volumn 29, Issue 6, 1982, Pages 1471-1478

Generation of oxide charge and interface states by ionizing radiation and by tunnel injection experiments

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

EID: 0020293801     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1982.4336389     Document Type: Article
Times cited : (63)

References (18)
  • 2
    • 0003750714 scopus 로고
    • Physics of SiO2 and its Interfaces
    • Pergamon Press, New York
    • “Physics of SiO2 and its Interfaces”, S.T. Pantelides, ed., Pergamon Press, New York (1978)
    • (1978)
    • Pantelides, S.T.1
  • 12
    • 84938447567 scopus 로고
    • Physics of SiO2 and its Interfaces
    • ed., Pergamon Press, New York
    • D.K. Ferry in “Physics of SiO2 and its Interfaces”, S.T. Pantelides, ed., Pergamon Press, New York (1978)
    • (1978) S.T. Pantelides
    • Ferry, D.K.1
  • 14
    • 0016972499 scopus 로고
    • T.H. Ning, J. Appl. Phys., Vol. 47, No. 7, 3203 (1976)
    • (1976) J. Appl. Phys. , vol.47 , Issue.7 , pp. 3203
    • Ning, T.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.