Viscous shear flow model for MOS device radiation sensitivity

IEEE Transactions on Nuclear Science

Volumn 23, Issue 6, 1976, Pages 1534-1539

  Eernisse, E P ^a   Derbenwick, G F ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - MODELING;

SEMICONDUCTOR DEVICES, MIS;

EID: 0017216093     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1976.4328534     Document Type: Article

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