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Journal of Applied Physics

Volumn 50, Issue 5, 1979, Pages 3492-3494

Two-stage process for buildup of radiation-induced interface states

(4) Winokur, P S a Boesch Jr , H E a McGarrity, J M a McLean, F B a

a U S ARMY RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

CAPACITORS;

EID: 0018468948 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.326344 Document Type: Article

Times cited : (167)

References (11)

1
- 84938002290
- (1975) IEEE Trans. Nucl. Sci , vol.NS‐22 , pp. 2163
- Boesch, H.E.¹ McLean, F.B.² McGarrity, J.M.³ Ausman, G.A.⁴

2
- 0017741211
- (1977) IEEE Trans. Nucl. Sci , vol.NS‐24 , pp. 2113
- Winokur, P.S.¹ Boesch, H.E.² McGarrity, J.M.³ McLean, F.B.⁴

3
- 0017217554
- (1976) IEEE Trans. Nucl. Sci , vol.NS‐23 , pp. 1580
- Winokur, P.S.¹ McGarrity, J.M.² Boesch, H.E.³

4
- 0008987187
- (1976) Appl. Phys. Lett , vol.28 , pp. 627
- Winokur, P.S.¹ Sokoloski, M.M.²

5
- 0018153451
- (Pergamon, New York, )
- (1978) Proc. of Intl. Conf. on Phys. of [formula omitted] and Its Interfaces , pp. 428
- McGarrity, J.M.¹ Winokur, P.S.² Boesch, H.E.³ McLean, F.B.⁴

6
- 0017547758
- (1977) IEEE Trans. Electron Devices , vol.ED‐24 , pp. 1249
- Chang, C.C.¹ Johnson, W.C.²

7
- 0017981560
- (1978) IEEE Trans. Nucl. Sci , vol.NS‐25 , pp. 1012
- Boesch, H.E.¹ McGarrity, J.M.² McLean, F.B.³

8
- 0017690426
- (1977) IEEE Trans. Nucl. Sci , vol.NS‐24 , pp. 2102
- Revesz, A.G.¹

9
- 0017271820
- (1976) IEEE Trans. Nucl. Sci , vol.NS‐23 , pp. 1563
- Sah, C.T.¹

10
- 0017493207
- (1977) J. Appl. Phys , vol.48 , pp. 2004
- Jeppson, K.O.¹ Svensson, C.M.²

11
- 84951190587
- (Druck, Schmitt & Meyer, Wurzburg,) Part 1
- (1977) Proc. of Second Intl. Conf. on Electronic Properties of Two‐Dimensional Systems , pp. 58
- Pepper, M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.