Remote plasma nitrided oxides for ultrathin gate dielectric applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3506, Issue , 1998, Pages 30-40

  Hattangady, S V ^a   Grider, D T ^a   Kraft, R ^a   Shiau, W T ^a   Douglas, M ^a   Nicollian, P ^a   Rodder, M ^a   Brown, G A ^a   Chatterjee, A ^a   Hu, J ^a   Aur, S ^a   Tsai, H L ^a   Chapman, R A ^a   Eklund, R H ^a   Chen, I C ^a   Pas, M F ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Gate dielectrics; Gate oxide; Nitrided oxides; Remote plasma nitridation; Stacked gate dielectrics

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; NITRIDING; PLASMA DENSITY; RELIABILITY; ULTRATHIN FILMS;

NITRIDE-OXIDE FILM; NITRIDED OXIDE; POLY DIELECTRIC INTERFACE; REMOTE PLASMA NITRIDATION; REMOTE-PLASMA NITRIDED OXIDE; ULTRATHIN GATE DIELECTRIC FILM;

NITROGEN OXIDES;

EID: 0002913190     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.323956     Document Type: Conference Paper

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