Comparative pMOS study of 33 angstroms nitrided oxides prepared by either N2O or nitrogen implant before gate oxidation for 0.18-0.13 μm CMOS technologies

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1997, Pages 167-171

  Hu, J C ^a   Kuehne, J ^a   Grider, T ^a   Rodder, M ^a   Chen, I C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; NITRIDES; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE;

NITRIDED OXIDES;

CMOS INTEGRATED CIRCUITS;

EID: 0030658189     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)