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Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 163-172

Characterization and control of II-VI/III-V heterovalent interfaces

(7) Ohtake, Akihiro a,b Miwa, Shiro a,b Kuo, Li Hsin a,b Yasuda, Tetsuji a,c Kimura, Kozo a,b Jin, Chengguo a,c Yao, Takafumi a,c,d

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

b Angstrom Technology Partnership (Japan)

c NATL INST FOR ADV INTERDISC RES (Japan)

d TOHOKU UNIVERSITY (Japan)

Author keywords

Defect generation; Epitaxy; GaAs; Heterovalent interface; ZnSe

Indexed keywords

EID: 0001667191 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)80315-1 Document Type: Article

Times cited : (25)

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