Dependence of defect generation and structure on interface chemistry in ZnSe/GaAs

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 495-502

  Kuo, L H ^a,c   Kimura, K ^a,c   Miwa, S ^a,c   Yasuda, T ^a,d   Ohtake, A ^a,c   Yao, T ^a,b,d  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Defect generation; Interface chemistry; Interface treatment; Stacking faults; ZnSe GaAs

Indexed keywords

CRYSTAL DEFECTS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

SHOCKLEY TYPE STACKING FAULTS;

SEMICONDUCTOR MATERIALS;

EID: 19244372867     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80131-6     Document Type: Article

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