The growth start on the heterovalent GaAs-ZnSe interface under Te, Se and Zn termination

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 761-765

  Spahn, W ^a   Ress, H R ^a   Schull K ^a   Ehinger, M ^a   Hommel, D ^b   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; SELENIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; TELLURIUM; ZINC;

CRYSTAL QUALITY; PSEUDOMORPHIC GROWTH; TERMINATION; TWO DIMENSIONAL GROWTH START;

SEMICONDUCTOR GROWTH;

EID: 0030562468     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00871-3     Document Type: Article

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