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Volumn 159, Issue 1-4, 1996, Pages 761-765
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The growth start on the heterovalent GaAs-ZnSe interface under Te, Se and Zn termination
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
MONOLAYERS;
SELENIUM;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
TELLURIUM;
ZINC;
CRYSTAL QUALITY;
PSEUDOMORPHIC GROWTH;
TERMINATION;
TWO DIMENSIONAL GROWTH START;
SEMICONDUCTOR GROWTH;
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EID: 0030562468
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00871-3 Document Type: Article |
Times cited : (25)
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References (16)
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