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Volumn 159, Issue 1-4, 1996, Pages 761-765

The growth start on the heterovalent GaAs-ZnSe interface under Te, Se and Zn termination

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; SELENIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; TELLURIUM; ZINC;

EID: 0030562468     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00871-3     Document Type: Article
Times cited : (25)

References (16)
  • 11
    • 0040762404 scopus 로고    scopus 로고
    • note
    • a was determined by electrochemical C-V profiling.
  • 16


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.