Measurement of interface-induced optical anisotropies of a semiconductor heterostructure: ZnSe/GaAs(100)

Physical Review Letters

Volumn 77, Issue 2, 1996, Pages 326-329

  Yasuda, T ^a,b   Kimura, K ^a,c   Miwa, S ^a,c   Kuo, L H ^a,c   Jin, C G ^a,d   Tanaka, K ^a,b,d   Yao, T ^a,b,e  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643052317     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.77.326     Document Type: Article

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