ZnSe epitaxial growth on zinc-and selenium-treated GaAs(001) surfaces observed by STM

Applied Surface Science

Volumn 107, Issue , 1996, Pages 184-188

  Miwa, S ^a,b   Kimura, K ^a,b   Yasuda, T ^a,c   Kuo, L H ^a,b   Jin, S ^d   Tanaka, K ^a,c,d   Yao, T ^a,c,e  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b Angstrom Technology Partnership   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TREATMENT;

SURFACE RECONSTRUCTION; ZINC SELENIDES;

SEMICONDUCTING FILMS;

EID: 0030566288     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00476-X     Document Type: Article

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