Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs

Journal of Electronic Materials

Volumn 26, Issue 2, 1997, Pages 53-63

  Kuo, L H ^a,b   Kimura, K ^a,b   Miwa, S ^a,b   Yasuda, T ^a,c   Yao, T ^a,d  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b Angstrom Technology Partnership   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Defect generation; Flux ratio; Interface chemistry; Stacking faults; Surface stoichiometry; ZnSe GaAs

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT GENERATION; FLUX RATIO; INTERFACE CHEMISTRY; SURFACE STOICHIOMETRY;

STACKING FAULTS;

EID: 0031077949     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0088-6     Document Type: Article

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