Surface structure of Zn- Or Se-treated GaAs(001) and its influence for ZnSe heteroepitaxy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 472-476

  Miwa, S ^a,b   Kimura, K ^a,b   Kuo, L H ^a,b   Yasuda, T ^a,c   Yao, T ^a,c,d  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b Angstrom Technology Partnership   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

GaAs; Heteroepitaxy; STM; Surface structure; ZnSe

Indexed keywords

MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROEPITAXY;

SEMICONDUCTOR MATERIALS;

EID: 0031548277     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80127-4     Document Type: Article

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