Structural change of As-stabilized GaAs(001)-(2 × 4) and -c(4 × 4) induced by zinc exposure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 3 B, 1997, Pages

  Miwa, Shiro ^a   Kuo, Li Hsin ^a   Kimura, Kozo ^a   Yasuda, Tetsuji ^a   Yao, Takafumi ^a  

^a Joint Research Cent for Atom   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PRECIPITATION (CHEMICAL); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; ZINC;

REFLECTION DIFFERENCE SPECTROSCOPY; STRUCTURAL CHANGE; SURFACE PROTRUSIONS; ZINC SELENIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031095545     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l337     Document Type: Article

References (16)