Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs(001) surfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1254-1259

  Ohtake, A ^a,c   Kuo, L H ^a,c   Yasuda, T ^a,d   Kimura, K ^a,b,c   Miwa, S ^a,c   Yao, T ^a,d,e   Nakajima, K ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d NATL INST FOR ADV INTERDISC RES   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342751677     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589446     Document Type: Article

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