Reflectance-difference studies of interface-formation and initial-growth processes in ZnSe/GaAs(001) heteroepitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1212-1220

  Yasuda, T ^a,b   Kimura, K ^a,c   Miwa, S ^a,c   Kuo, L H ^a,c   Ohtake, A ^a,c   Jin, C G ^a,d   Tanaka, K ^a,b,d   Yao, T ^a,b,e  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042110838     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589441     Document Type: Article

References (42)

1. D. E. Aspnes, Thin Solid Films 233, 1 (1993).
2. B. Drevvillon and V. Yakovlev, Physics of Thin Films, edited by M. H. Francombe and J. L. Vossen (Academic, San Diego, CA, 1994), Vol. 19, p. 2.
3. D. W. Aspnes and A. A. Studna, Phys. Rev. Lett. 54, 1956 (1985).
4. T. Yasuda, K. Kimura, S. Miwa, L. H. Kuo, C. G. Jin, K. Tanaka, and T. Yao, Phys. Rev. Lett. 77, 326 (1996).
5. O. Acher, S. M. Koch, F. Omnes, M. Defour, M. Razeghi, and B. Drevillon, J. Appl. Phys. 68, 3564 (1990).
6. M. Wassermeier, I. Kamiya, D. E. Aspnes, L. T. Florez, J. P. Harbison, and P. M. Petroff, J. Vac. Sci. Technol. B 9, 2263 (1991).
7. T. Yasuda, D. E. Aspnes, D. R. Lee, C. H. Bjorkman, and G. Lucovsky, J. Vac. Sci. Technol. A 12, 1152 (1994).
8. Z. Yang, I. K. Sou, Y. H. Yeung, G. K. L. Wong, J. Wang, C. X. Jin, and X. Y. Hou, J. Vac. Sci. Technol. B 14, 2973 (1996).
9. T. Yasuda, L. H. Kuo, K. Kimura, S. Miwa, C. G. Jin, K. Tanaka, and T. Yao, J. Vac. Sci. Technol. B 14, 3052 (1996).
10. E. Steimetz, J.-T. Zettler, W. Richter, D. I. Westwood, D. A. Woolf, and Z. Sobiesierski, J. Vac. Sci. Technol. B 14, 3058 (1996).
11. B. Koopmans, B. Richards, P. V. Santos, and M. Cardona, 23rd International Conference on Physics on Semiconductors, Berlin, July 1996 (World Scientific, Singapore, 1996), p. 1891.
12. J.-T Zettler, K. Stahrenberg, W. Richter, H. Wenisch, B. Jobst, and D. Hommel, J. Vac. Sci. Technol. B 14, 2757 (1996).
13. C. C. Kim and S. Sivannanthan, Mater. Res. Soc. Symp. Proc. 406, 319 (1996).
14. M. J. Kastner, B. Hahn, R. Blumberg, E. Sossna, R. Duschl, and W. Gebhardt, J. Cryst. Growth 170, 188 (1997).
15. R. L. Gunshor and A. V. Nurmikko, Mater. Res. Bull. 20, 15 (1995).
16. G. F. Neumark, R. M. Park, and J. M. DePuydt, Physics Today 47, 26 (1994).
17. A. Ishibashi, J. Cryst. Growth 159, 555 (1996).
18. L. H. Kuo, K. Kimura, T. Yasuda, S. Miwa, C. G. Jin, K. Tanaka, and T. Yao, Appl. Phys. Lett. 68, 2413 (1996).
19. L. H. Kuo, K. Kimura, S. Miwa, T. Yasuda, C. G. Jin, K. Tanaka, and T. Yao, Appl. Phys. Lett. 69, 140 (1996).
20. L. H. Kuo, K. Kimura, S. Miwa, T. Yasuda, and T. Yao, J. Electron. Mater. 26, 52 (1997).
21. D. Li and M. D. Pashley, J. Vac. Sci. Technol. B 12, 2547 (1994).
22. T. Nakayama, J. Phys. Soc. Jpn. 61, 2458 (1992); K. Oda and T. Nakayama, Jpn. J. Appl. Phys. 1 31, 2359 (1992).
23. T. Nakayama, J. Phys. Soc. Jpn. 61, 2458 (1992); K. Oda and T. Nakayama, Jpn. J. Appl. Phys. 1 31, 2359 (1992).
24. T. Nakayama and M. Murayama, 23rd International Conference on Physics on Semiconductors, Berlin, July 1996 (World Scientific, Singapore, 1996), p. 939.
25. S. Miwa, K. Kimura, T. Yasuda, L. H. Kuo, C. G. Jin, K. Tanaka, and T. Yao, Appl. Surf. Sci. 107, 184 (1996).
26. S. Heun, J. J. Pagel, S. Rubin, and A. Franciosi, J. Vac. Sci. Technol. B 14, 2980 (1996).
27. S. Miwa (unpublished).
28. S. Takatani, T. Kikawa, and M. Nakazawa, Phys. Rev. B 45, 8498 (1992).
29. T. Hashizume, Q. K. Xue, J. Zhou, A. Ichihmiya, and T. Sakurai, Phys. Rev. Lett. 73, 2208 (1994).
30. Q. Xue, T. Hashizume, J. M. Zhou, T. Sakata, T. Ohno, and T. Sakurai, Phys. Rev. Lett. 74, 3177 (1995).
31. I. Kamiya, D. E. Aspnes, L. T. Florez, and J. P. Harbison, Phys. Rev. B 46, 15894 (1992).
32. 31S. Miwa, L. H. Kuo, K. Kimura, T. Yasuda, and T. Yao, Jpn. J. Appl. Phys. 36, L337 (1997).
33. S. Miwa, K. Kimura, T. Yasuda, L. H. Kuo, C. G. Jin, K. Tanaka, and T. Yao, 23rd International Conference on Physics on Semiconductors, Berlin, July 1996 (World Scientific, Singapore, 1996), p. 899.
34. D. E. Aspnes, J. P. Harbison, A. A. Studna, and L. T. Florez, J. Vac. Sci. Technol. A 6, 1327 (1988).
35. T. Yao and T. Takeda, Appl. Phys. Lett. 48, 160 (1986).
36. P. Lautenschlager, M. Garriga, S. Logothetidis, and M. Cardona, Phys. Rev. B 35, 9174 (1987).
37. U. Rossow, L. Mantese, and D. E. Aspnes, 23rd International Conference on Physics on Semiconductors, Berlin, July 1996 (World Scientific, Singapore, 1996), p. 831.
38. D. E. Aspnes, J. Opt. Soc. Am. A 10, 974 (1993).
39. D. E. Aspnes, Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic, San Diego, CA, 1985), p. 89.
40. R. W. Collins and J. Lee (private communication).
41. S. Adachi and T. Taguchi, Phys. Rev. B 43, 9569 (1991).
42. R. M. A Azzam and N. M. Bashara, Ellipsometry and Polarized Light (Elesevier,; Amsterdam, 1977), p. 269.