Impact of InP HEMT epilayer designs on side gating effects

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1683-1686

  Berthelemot, C ^a   Vigier, P ^a   Dumas, J M ^a   Harmand, J C ^b  

^a UNIVERSITY OF LIMOGES   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

DRAIN CURRENT; SIDE GATING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031247682     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00139-X     Document Type: Article

References (4)

1. C. Berthelemot, A. Farrenq, P. Vigier, J.M. Dumas, A. Clei, R. Palla and J.C. Hamand, Quality and Reliability Engineerin Int. VOL. 12, 321-327 (1996).
2. C. Berthelemot, P. Vigier, J.M. Dumas, P. Audren, A. Clei and J.C. Harmand, Proc. IEEE Indium Phosphide and Related Materials, 161-164 (1997).
3. J.M. Dumas, M. Henry, A. Fournier and A.M. Laffeter, Proc. European Fiber Optical Communications & Networks, 203-206 (1994).
4. M. Rocchi, Physica 129B, 119-135, North-Holland, Amsterdam (1995).