Slow-trap model for the kink effect on InAlAs/InP HFET

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 173-176

  Georgescu, B ^a   Souifi, A ^a   Post, G ^a   Guillot, G ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); KINK EFFECT;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030653812     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)