Study of buffer layers in a double channel InP-HFET structure

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 125-128

  Gautier Levine, A ^a   Post, G ^a   Decobert, J ^a   Audren, P ^a   Dumas, J M ^a  

^a Telecommunications France Telecom   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON EMISSION; ELECTRON SPECTROSCOPY; INSULATING MATERIALS; IONIZATION OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

ISOTHERMAL CURRENT RELAXATION TECHNIQUE;

FIELD EFFECT TRANSISTORS;

EID: 0030680385     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)