Degradation effects and stabilization of InAlAs/InGaAs-HFETs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 662-665

  Weigel, K ^a   Warth, M ^a   Hirche, K ^a   Heime, K ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL STRESS;

DEGRADATION EFFECTS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0029721889     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)