Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

Applied Physics Letters

Volumn 72, Issue 18, 1998, Pages 2202-2204

  Yu, G ^a   Ishikawa, H ^a   Umeno, M ^a   Egawa, T ^a   Watanabe, J ^a   Jimbo, T ^a   Soga, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; ELLIPSOMETRY; EXCITONS; HETEROJUNCTIONS; LIGHT ABSORPTION; MATHEMATICAL MODELS; PHOTONS; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

EXTINCTION COEFFICIENT; FREE EXCITON ABSORPTION TERM; OPTICAL CONSTANTS; SELLMEIR DISPERSION EQUATION; SPECTROSCOPIC ELLIPSOMETRY; TRANSITION ENERGY;

OPTICAL PROPERTIES;

EID: 0032073752     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121322     Document Type: Article

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