Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 134-141

  Edwards, N V ^a   Yoo, S D ^a   Bremser, M D ^a   Zheleva, Ts ^a   Horton, M N ^b   Perkins, N R ^b   Weeks Jr , T W ^a   Liu, H ^c,d   Stall, R A ^c   Kuech, T F ^b   Davis, R F ^a   Aspnes, D E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c EMCORE Corporation   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

Bandedge phenomena; GaN thin films; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; EXCITONS; SEMICONDUCTING FILMS; SPECTROSCOPIC ANALYSIS; SURFACE TREATMENT; THIN FILMS;

BANDEDGE PHENOMENA; GALLIUM NITRIDE THIN FILMS; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0343999795     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00151-7     Document Type: Article

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