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Volumn 55, Issue 15, 1997, Pages 9251-9254

Temperature dependence of the energies and broadening parameters of the interband excitonic transitions in wurtzite GaN

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EID: 0001689044     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.9251     Document Type: Article
Times cited : (109)

References (17)
  • 9
  • 12
    • 0001720790 scopus 로고
    • D. E. Aspnes, in Handbook on Semiconductors, edited by T. S. Moss (North-Holland, Amsterdam, 1980), Vol. 2, p. 109.
    • (1980) Handbook on Semiconductors , vol.2 , pp. 109
    • Aspnes, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.