Physical mechanisms of dielectric breakdown in SiO2 for the range of -150°C to 150°C

Quality and Reliability Engineering International

Volumn 12, Issue 4, 1996, Pages 287-289

  Abadeer, W W ^a,b,c,d   Vollertsen, R P ^b,e,f  

^a IBM MICROELECTRONICS   (United States)

^b IBM   (United States)

^c ASSIUT UNIVERSITY   (Egypt)

^d UNIVERSITY OF VERMONT   (United States)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^f SIEMENS AG   (Germany)

Author keywords

Activation energy; Area effect; Interface; Poly SiO2; Si SiO2 interface; Trap creation; Upper limits

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DIELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); IONIZATION; MODELS; RELIABILITY; SILICA; SILICON;

AREA EFFECT; DIELECTRIC BREAKDOWN; TRAP CREATION; UPPER LIMITS;

ELECTRIC BREAKDOWN OF SOLIDS;

EID: 0030197286     PISSN: 07488017     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-1638(199607)12:4<287::AID-QRE35>3.0.CO;2-2     Document Type: Article

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