Influence of 1 nm-thick structural `strained-layer' near SiO2/Si interface on sub-4 nm-thick gate oxide reliability

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 175-178

  Eriguchi, Koji ^a   Harada, Yoshinao ^a   Niwa, Masaaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICA; STRAIN; X RAY PHOTOELECTRON SPECTROSCOPY;

TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

GATES (TRANSISTOR);

EID: 0032254780     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)