Growth and application of undoped and doped diamond films

Reports on Progress in Physics

Volumn 61, Issue 12, 1998, Pages 1665-1710

  Werner, M ^a   Locher, R ^b  

^a VDI/VDE Technologiezentrum I GmbH   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001189864     PISSN: 00344885     EISSN: None     Source Type: Journal    
DOI: 10.1088/0034-4885/61/12/002     Document Type: Article

References (173)

1. AEA Technology plc 1997 The world market for high temperature electronics HITEN Report (AEA Technology plc) pp 1-53
2. Aslam M, Yang G S and Masood A 1994 Sensors Actuators A 45 131
3. Bachmann P 1998 Handbook of Industrial Diamonds and Diamond Films ed Prelas et al (New York: Dekker) p 827
4. Bachmann P, Drawl W, Knight D, Weimer R and Messier R 1988 Diamond and diamond-like materials Proc. MRS Symp. vol EA-15, ed Badzian et al p 99
5. Bachmann P, Hagemann H J, Lade H, Leers D, Wiechert D U and Wilson H 1995 Diam. Relat. Mater. 4 820
6. Bachmann P, Leers D and Lydtin H 1991 Diam. Relat. Mater. 1 1
7. Berman R 1979 The Properties of Diamond ed J E Fields (London: Academic)
8. _ 1994 Properties and Growth of Diamond (EMIS Datareviews Series No 9) ed G Davis (London INSPEC)
9. Borst T H, Strobel S and Weis O 1995 Appl. Phys. Lett. 67 2651
10. Boudreaux P J 1995 Applications of Diamond Films and Related Materials. 3rd Int. Conf. ed Feldmann et al p 603
11. Braunstein G, Talmi A, Kalish R, Bernstein and Beserman R 1980 Radiat. Eff. 48 139
12. Brosius P R, Corbett J W and Bourgoin J C 1974 Phys. Status Solidi a 21 677
13. Callaway J 1959 Phys. Rev. 113 1046
14. Capitelli M, Colonna G, Hassouni K and Gicquel A 1996 Plasma Chem. Proc. 16 153
15. Carruthers P 1961 Rev. Mod. Phys. 33 92
16. Chalker P R and Johnston C 1996 Phys. Status Solidi a 154 455
17. Chalker P R, Johnsion C, Crossley J A A, Ambrose J, Ayres C F, Harper R E, Buckley-Golder I M and Kobashi K 1993 Diam. Relat. Mater. 2 1100
18. Chiu C-C, Liou Y and Juang Y-D 1995 Thin Solid Films 260 118
19. Chu S N G, Katz A, Boone T, Thomas P M, Riggs V G, Dautremmont-Smith W C and Johnston W D 1990 J. Appl. Phys. 67 3754
20. Committee on materials for high-temperature semiconductor devices 1995 National materials advisory board commission on engineering and technical systems, national research council materials for high-temperature semiconductor devices Report NMAB-474 (Washington DC)
21. Davidson J L and Kang W P 1996 Mater. Res. Soc. 416 397
22. Davidson J L, Ramesham R and Ellis C 1990 J. Electrochem. Soc. 137 3206
23. Davis G 1994 Properties and Growth of Diamond (London: INSPEC)
24. Derjaguin B V and Fedoseev D V 1973 Carbon 11 299
25. Derjaguin B V, Fedoseev D V, Lukyanovich V M, Spitzin B V, Ryabov V A and Lavrentyev 1968 J. Cryst. Growth 2 380
26. D'Evelyn M P, Slutz D E and Williams B E 1995 Mater. Res. Soc. Symp. Proc. 383 115
27. de Vries R C, Badzian A and Roy R 1996 R. Soc. Bull. February, p 65
28. Dischler B and Wild C 1998 Low Pressure Synthetic Diamond: Manufacturing and Applications (Berlin: Springer) to appear
29. Dischler B, Wild C, Muller-Sebert W and Koidl P 1993 Physica 185B 217
30. Dorsch O, Holzner K, Werner M, Obermeier E, Harper R E, Johnston C, Chalker P R and Buckley-Golder I M 1993 Diam. Relat. Mater. 2 1096
31. Dreifus D L 1995 Diamond: Electronic Properties and Applications ed L S Pan and D R Kania (Boston, MA: Kluwer) pp 371-441
32. Feldmann A et al (ed) 1995 Applications of Diamonds Films and Related Materials: Third Int. Conf. (NIST Special Publication) p 885
33. Fields J E 1979 The Properties of Diamond (London: Academic)
34. Fontaine F 1997 Doping of Diamond by Ion Implantation unpublished review
35. Fontaine F, Deneuville A, Gheeraert, Gonon, Abello L and Lucazeau 1994 Diam. Relat. Mater. 3 623
36. Fontaine F, Uzan-Saguy C, Philosoph B and Kalish R 1996 Appl. Phys. Lett. 68 2264
37. Fujimori N, Nakahata H and Imai T 1990 Japan. J. Appl. Phys. 29 824
38. Füner M, Wild C and Koidl P 1998 Appl. Phys. Lett. 72 1149
39. Geis M W 1992 Diam. Relat. Mater. 1 684
40. Gluche P, Adamschik M, Vescan A, Ebert W, Flöter A, Zachai R and Kohn E 1998 Diam. Relat. Mater. 7 779
41. Gluche P, Aleksov A, Vescan A, Ebert W and Kohn E 1997b IEEE Trans. Electron. Devices Lett. 18 547
42. Gluche P, Leuner R, Vescan A, Ebert W, Kohn E, Rembe C, Wiesche S aus der and Hofer E P 1997a Proc. Micro Materials Conf. (Dresden: Druckhaus) p 573
43. Graebner J E 1998 Handbook of Industrial Diamonds and Diamond Films ed Prelas et al (New York: Dekker) p 193
44. Graebner J E, Jin S, Kammlott G W, Herb J A and Gardinier C F 1992 Appl. Phys. Lett. 60 1576
45. Gray K J 1992 SPIE 1759 203
46. Grimsditch M H and Ramdas A K 1975 Phys. Rev. B 11 3139
47. Grot S A, Hatfield C W, Gildenblat G S, Badzian A R and Badzian T 1991 Appl. Phys. Lett. 58 1542
48. Harris D C 1994 SPIE 2286 218
49. Harris K, Herrit G L, Johnson C J, Rummel S P and Scatena D J 1991 Appl. Opt. 30 5015
50. Haubner R and Lux B 1993 Diam. Relat. Mater. 2 1277
51. Hayashi K, Yamanaka S, Okushi H and Kajimura K 1996 Appl. Phys. Lett. 68 376
52. Hewett C A and Zeidler J R 1992 Diam. Relat. Mater. 1 688
53. Hirose Y and Terasawa Y 1986 Japan. J. Appl. Phys. 25 L519
54. Hollmann P, Alahelisten A, Olsson M and Hogmark S 1995 Thin Solid Films 270 137
55. Holmes J S and Dreifus D L 1994 Int. Electron. Devices Meeting (IEDM '94 Tech. Digest) p 423
56. Hyman E, Tsang K, Drobot A, Lane B, Casey J and Post R 1994 J. Vac. Sci. Technol. A 12 1474
57. Jiang X, Harzer J V, Hillebrands B, Wild Ch and Koidl P 1991 Appl. Phys. Lett. 59 1055
58. Jiang X and Klages C-P 1993 Diam. Relat. Mater. 2 1112
59. Jiang X, Klages C P, Zachai R, Hartweg M and Füsser H-J 1993 Appl. Phys. Lett. 62 3438
60. Jin S and Moustakas T D 1994 Appl. Phys. Lett. 65 403
61. Job R, Denisenko A V, Zaitsev A M, Melnikov A A, Werner M and Fahrner W R 1996 Thin Solid Films 290-1 165
62. Jones B L 1992 Mater. Sci. Eng. B 11 149
63. Kajihara S A, Antonelli A, Bernholc J and Car R 1991 Phys. Rev. Lett. 66 2010
64. Kamo M, Sato Y, Matsumoto S and Setaka N 1983 J. Cryst. Growth 62 642
65. Kanda Y 1991 Sensors Actuators A 28 83
66. Kawarada H 1998 Low Pressure Synthetic Diamond: Manufacturing and Applications ed B Dischler and C Wild (Berlin: Springer) p 139
67. Kawarada H, Aoki M, Sasaki and Tsugawn 1994 Diam. Relat. Mater. 3 961
68. Kawarada H, Wild C, Herres N, Locher R, Koidl P and Nagasawa H 1997 J. Appl. Phys. 81 3490
69. Kawato T and Kondo K 1987 Japan. J. Appl. Phys. 26 1429
70. Klein C A 1992 SPIE 1624 475
71. Klein C A and Cardinale G F 1993 Diam. Relat. Mater. 2 918
72. Klemens P G 1958 Solid State Physics ed F Seits and D Turnbull (New York: Academic)
73. Klocek P 1991 Handbook of Infrared Optical Materials (New York: Dekker)
74. Kohn E and Ebert W 1998 Low Pressure Synthetic Diamond: Manufacturing and Applications ed B Dischler and C Wild (Berlin: Springer) p 331
75. Koidl P, Wild C, Füner M, Wömer E and Müller-Sebert W 1998 Proc. Symp. I Super Carbon of the IUMRS-ICA-97, (16-18 September 1997) (Japan: Makuhari) to be published
76. Koidl P, Wild C and Wörner E 1997 Int. Conf. and Exhibition Micro Materials 'Micro Mat 97' (Berlin, 16-18 April 1997)
77. Koidl P, Wild C, Wömer E, Müller-Sebert W, Füner M and Jehle M 1996 Proc. Int. Diamond Symp. (Seoul, Korea) ed D S Lim and H H Koo p 3
78. Koizumi S, Kamo M, Sato Y, Ozaki H and Inuzuka T 1997 Appl. Phys. Lett. 71 1065
79. Koizumi S, Murakami T, Inuzuka T and Suzuki K 1990 Appl. Phys. Lett. 57 563
80. Lettington A and Steeds J W 1994 Thin Film Diamond (London: Chapman and Hall)
81. Liu W, Tucker D A, Yang P and Class J T 1995 J. Appl. Phys. 78 1291
82. Locher R, Wagner J, Fuchs F, Maier M, Gonon P and Koidl P 1995b Diam. Relat. Mater. 4 678
83. Locher R, Wagner J, Fuchs F, Wild C, Hiesinger P, Gonon P and Koidl P 1995a Mater. Sci. Eng. B 29 211
84. Locher R, Wild C, Herres N, Behr D and Koidl P 1994 Appl. Phys. Lett. 65 34
85. Lu G 1993 Applications of Diamond Films and Related Materials, 2nd Int. Conf. ed A Feldmann et al. p 269
86. Malta D M, Windheim J A von, Wynands H A and Fox B A 1995 J. Appl. Phys. 77 1536
87. Massarani B, Bourgoin J C and Chrenko R M 1978 Phys. Rev. B 17 1758
88. Massart M, Union P, Scarsbrook G A, Sussmann R S and Muys P F 1996 SPIE 2714 177
89. Matsubara H and Sakuma T 1990 J. Mater. Sci. 25 4472
90. Matsumoto S, Sato Y, Kamo M and Sekata N 1982 Japan. J. Appl. Phys. 21 L183
91. McGeoch S P, Gibson D R and Savage J A 1992 SPIE 1760 122
92. McKeag R D, Chan S S M and Jackman R B 1995 Appl. Phys. Lett. 67 2117
93. McNamara K M, Levy D H, Gleason K K and Robinson C J 1991 Appl. Phys. Lett. 60 580
94. McSkimin H J 61nd Andreatch P 1972 J. Appl. Phys. 43 2944
95. Mead C A and Spitzer W G 1964 Phys. Rev. A 134 713
96. Miller A and Abrahams E 1960 Phys. Rev. 120 745
97. Miyati K, Kumagai K, Nishimura K and Kobashi K 1993 J. Mater. Res. 8 2845
98. Moelle C, Klose S, Szücs F, Fecht H J, Johnston C, Chalker P R and Werner M 1997b Diam. Relat. Mater. 6 839
99. Moelle C, Szücs F, Fecht H J, Röhrs P, Johnston C, Chalker P R and Werner M 1997a Proc Micro Materials Conf. (Dresden: Druckhaus) p 493
100. Mönch W 1994 Europhys. Lett. 27 479
101. Morelli D T 1994 Chem. Phys. Carbon 24 45
102. Mort J, Kuhman D, Machonkin M, Morgan M, Jansen F, Okumura K, LeGrice Y M and Nemanich R J 1989 Appl. Phys. Lett. 55 1121
103. Müller-Sebert W, Wörner E, Fuchs F, Wild C and Koidl P 1996 Appl. Phys. Lett. 68 759
104. Murakawa M, Takeuchi S, Miyazawa H and Hirose Y 1988 Surf. Coat. Technol. 36 303
105. Ohtsuka K, Suzuki K, Sawabe A and Inuzuka T 1996 Japan J. Appl. Phys. 35 L1072
106. Okoli S, Haubner R and Lux B 1991 J. Physique VI 923
107. Olson J R, Pohl R O, Vandersande J W, Zoltan A, Anthony T R and Banholzer W F 1993 Phys. Rev. B 47 14 850
108. Onn D G, Witek A, Qiu Y Z, Anthony T R and Banholzer W F 1992 Phys. Rev. Lett. 68 2806
109. Pan L S and Kania D R 1995 Diamond Electronic Properties and Applications (Boston, MA: Kluwer)
110. Pickrell D J, Kline K A and Taylor R E 1994 Appl. Phys. Lett. 64 2353
111. Post R 1993 The business and technical outlook lor CVD diamond and diamond-like carbon Proc. 2nd Gorham Advanced Materials Conf. (Monterey, CA)
112. Prawer S and Kalish 1995 Phys. Rev. B 51 15711
113. Prelas M A, Popovici G and Bigelow L K 1997 Industrial Handbook for Diamond and Diamond Films (New York Dekker)
114. Prins J F 1988 Phys. Rev. B 38 5576
115. Roppol T, Ramesham R, Ellis C and Lee S Y 1992 Thin Solid Films 212 56
116. Rutsch G and Werner M 1997 Proc Micro Materials Conf. (Dresden: Druckhaus) p 602
117. Samlenski R, Haug C, Brenn R, Wild C, Locher R and Koidl P 1996 Diam. Relat. Mater. 5 947
118. Sato Y, Fujita H, Ando T, Tanaka T and Kamo M 1993 Phil. Trans. R Soc. A 342 225
119. Savvides N and Bell T J 1992 J. Appl. Phys. 72 2791
120. Schafer L, Sattler M and Klages C P 1991 Applications of Diamond Films and Related Materials ed Y Tzeng et al (Amsterdam: Elsevier) p 197
121. Sevillano E 1998 Low Pressure Synthetic Diamond: Manufacturing and Applications ed B Dischler and C Wild (Berlin: Springer) p 11
122. Seal M 1993 Phil. Trans. R. Soc. A 342 313-22
123. Shiomi H, Nishibayashi Y and Fujimori N 1991 Japan J. Appl. Phys. 30 1363
124. Shoklovskii B I and Shlimak I S 1972 Sov. Phys. Semicond. 6 104
125. Shor J S, Bemis L and Kurz A D 1994 IEEE Trans. Electron. Devices 41 661
126. Sommer M and Smith F W 1990 J. Mater. Res. 5 2433
127. Spytsin B V, Bouilov L L and Derjaguin B V 1981 J. Cryst. Growth 52 219
128. Stoner B R and Glass J T 1992 Appl. Phys. Lett. 60 698
129. Sugmo T, Karasutani K, Kataoka H, Kobashi K and Shirafuji J 1994 Advances in New Diamond Science and Technology ed S Saito et al (Tokyo: MYU) p 705
130. Szücs F, Fecht H-J, Werner M and Sussmann R S 1998 unpublished results
131. Szücs F, Moelle Ch, Klose S, Fecht H-J, Faßbender S, Meyendorf N and Werner M 1997 Proc. Micro Materials Conf. (Dresden: Druckhaus) p 569
132. Tachibana T, Williams B E and Glass J T 1992 Phys. Rev. B 45 11 975
133. Tachibana T, Yokota Y, Nishimuta K, Miyata K, Kobashi K and Shintani Y 1996 Diam. Relat. Mater. 5 197
134. Taher I, Aslam M, Tamor M A, Potter T J and Elder R C 1994 Sensors Actuators A 45 35
135. Tessmer A J, Plano L S and Dreifus DI 1993 IEEE Electron. Devices Lett. 14 66
136. Trombetta J M, Hoggins J T, Klocek P and McKenna T A 1991 SPIE 1534
137. Troy C T 1992 Photon. Spectra 28 28
138. Tsai W, Delfino M, Hodul D, Riaziat M, Ching L Y, Reynolds G and Cooper C P 1991 IEEE Trans. Electron. Devices Lett. 13 126
139. Van der Drift A 1967 Philips Res. Rep. 22 267
140. Vandersande J W 1976 Phys. Rev. B 13 4560
141. Venkatesan V, Das K, Windheim J A von and Geis M W 1993a Appl. Phys. Lett. 63 1065
142. Venkatesan V, Malta D M, Das K and Belu A M 19936 J. Appl. Phys. 74 1179
143. Vescan A, Daumiller I, Gluche P, Ebert W and Kohn E 1997a IEEE Trans. Electron. Devices Lett. 18 556
144. Vescan A, Gluche P, Ebert W and Kohn E 1997b IEEE Trans. Electron. Devices Lett. 18 222
145. Vihnevskii A S, Gontar A G, Torishnii V I and Shu'zhenko A A 1981 Sov. Phys. Semicond. 15 659
146. Werner M 1998 Low Pressure Synthetic Diamond: Manufacturing and Applications ed B Dischler and C Wild (Berlin, Springer) p 243
147. Werner M et al 1993a Appl. Phys. Lett. 64 595
148. Werner M, Dorsch O, Baerwind H-U, Obermeier E, Johnsion C, Chalker P R and Romani S 1995a IEEE Trans. Electron. Devices 42 1344
149. Werner M, Dorsch O and Obermeier E 1994 Elecron. Technol. 27 83
150. _ 1995b Diam. Relat. Mater. 4 873
151. Werner M, Mein S and Obermeier E 1993b Diam. Relat. Mater. 2 939
152. Werner M, Job R, Denisenko A, Zaitsev A, Fahmer W R, Johnston C, Chalker P R and Buckley-Golder I M 1996b Diam. Relat. Mater. 5 723
153. Werner M, Johnston C, Chalker P R, Romani S, and Buckley-Golder I M 1996a J. Appl. Phys. 79 2535
154. Werner M, Klose S, Szücs F, Moelle Ch, Fecht H J, Johnston C, Chalker P R and Buckley-Golder I M 1997a Diam. Relat. Mater. 6 344
155. Werner M, Locher R, Kohly W, Holmes D S, Klose S and Fecht H J 1997b Diam. Relat. Mater. 6 308-13
156. Wild C 1998 Low Pressure Synthetic Diamond: Manufacturing and Applications ed B Dischler and C Wild (Berlin: Springer) p 189
157. Wild C, Herres N and Koidl P 1990 J. Appl. Phys. 68 973
158. Wild C, Kohl R, Herres N, Müller-Sebert W and Koidl P 1994 Diam. Relat. Mater. 3 373
159. Wild C, Locher R and Koidl P 1996 Proc. Mat. Res. Soc. 416 75
160. Wiley J D, Perepezko J H, Nordman J E and Guo K-J 1982 IEEE Trans. Ind. Electron. IE-29 154
161. Wilks J and Wilks E 1991 Properties and Applications of Diamond (Oxford Butterworth-Heinemann)
162. Williams A W S, Lightowlers E C and Collins A T 1970 J. Phys. C: Solid State Phys. 3 1727
163. Wörner E 1998 Low Pressure Synthetic Diamond: Manufacturing and Applications ed B Dischler and C Wild (Berlin: Springer) p 165
164. Wörner E, Wild C, Müller-Sebert W, Locher R and Koidl P 1996 Diam. Relat. Mater. 5 668
165. Wur D R, Davidson J L, Kang W P and Kinser D L 1995 J. Micromech. Syst. 4 34
166. Yang G S and Aslam D M 1996 IEEE Trans. Electron. Devices Lett. 17 250
167. Yu A Y C 1970 Solid State Electron. 13 239
168. Yugo S, Kanai H, Kimura T and Muto T 1991 Appl. Phys. Lett. 58 1036
169. Zaitsev A M 1998 Handbook of Industrial Diamonds and Diamond Films ed Prelas et al (New York: Dekker) p 227
170. Zhang X K, Guo J G, Yao Y F, Wang R, Chen G M, Zhou W K and Yu S 1993 Appl. Phys. A 56 425
171. Zhao G, Charlson E M, Stacy T, Meese J M, Popovici G and Prelas M 1993 J. Appl. Phys. 73 1832
172. Zhou S, Zhihao Z, Ning X and Xiaofeng Z 1994 Mater. Sci. Eng. B 25 47
173. Zhu W, Yang P C and Glass J T 1993 Appl. Phys. Lett. 63 1640