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Volumn 7, Issue 6, 1998, Pages 779-782

Application of highly oriented, planar diamond (HOD) films of high mechanical strength in sensor technologies

Author keywords

Force; Gauge factor; Piezoresistor; Young's modulus

Indexed keywords

BORON; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELASTIC MODULI; MICROSENSORS; PIEZOELECTRIC DEVICES; STRENGTH OF MATERIALS;

EID: 0032092608     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00303-8     Document Type: Article
Times cited : (32)

References (8)
  • 2
    • 0000561206 scopus 로고    scopus 로고
    • The nucleation of highly oriented diamond on :iiiicon via ~ alternating current substrate bias
    • S.D. Wolter, T.H. Borst, A. Vescan, E. Kohn, The nucleation of highly oriented diamond on :iiiicon via ~ alternating current substrate bias, Appl. Phys. Lett. 68 (25) (1996) 3558.
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.25 , pp. 3558
    • Wolter, S.D.1    Borst, T.H.2    Vescan, A.3    Kohn, E.4
  • 4
    • 0030192787 scopus 로고    scopus 로고
    • Selectively grown ohmic contacts to δ-doped diamond films
    • A. Vescan, P. Gluche, W. Ebert, E. Kohn, Selectively grown ohmic contacts to δ-doped diamond films, Elect. Lett. 32 (15) (1996) 1419-1421.
    • (1996) Elect. Lett. , vol.32 , Issue.15 , pp. 1419-1421
    • Vescan, A.1    Gluche, P.2    Ebert, W.3    Kohn, E.4
  • 5
    • 0039753402 scopus 로고    scopus 로고
    • Processing of high temperature stable contacts to single crystal diarnond
    • Anaheim, CA. USA
    • P. Gluche, W. Ebert, A. Vescan, E. Kohn, Processing of high temperature stable contacts to single crystal diarnond, in: Proc. of the 125th TMS annual meeting, Anaheim, CA. USA, 1996. pp. 107-110.
    • (1996) Proc. of the 125th TMS Annual Meeting , pp. 107-110
    • Gluche, P.1    Ebert, W.2    Vescan, A.3    Kohn, E.4
  • 7
    • 58149324048 scopus 로고
    • Electrical characterization of homoepitaxial diamond films doped with B, P, Li, and Na during crystal growth
    • T.H. Borst, O. Weis, Electrical characterization of homoepitaxial diamond films doped with B, P, Li, and Na during crystal growth, Diamond Relat. Mater. 4 (1995) 948.
    • (1995) Diamond Relat. Mater. , vol.4 , pp. 948
    • Borst, T.H.1    Weis, O.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.