Prospects for single molecule information processing devices

Proceedings of the IEEE

Volumn 89, Issue 8, 2001, Pages 1147-1171

  Wada, Yasuo ^a,b  

^a HITACHI LTD   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Conducting molecule; High performance information processing; Information processing switching device; Information technology; Single molecule device

Indexed keywords

EID: 0001097795     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.940278     Document Type: Article

References (145)

1. N. P. Smith, "Hardware for high-performance computing: abstract progress, painful consolidation," IEEE Connut. Sei. Eng., vol. 3, no. 2, p. 104, 1996.
2. S. R. Hufstein and F. P. Heiman. "The silicon insulated-gate fieldeffect transistor," Proc. IEEE, vol. 51, p. 1190, 1963.
3. S. M. Sze. Phvsics of Semiconductor Devices. New York: Wiley, 1981.
4. _, Semiconductor Devices: Pioneering Papers. Singapore: World Scientific, 1991.
5. Y Wada, T, L'da, M. 1. Lutwyche, S. Kondo, and S. Heike, "A proposal of nanoscale devices based on atom/molecule switching," J. Appl. Phys., vol. 74, p. 7321, 1993.
6. T. Susano, VLSI Process Data Handbook. Tokyo: Science Forurn, 1990.
7. R. W. Keves, "The future of the transistor," Physics Today, vol. 45, p. 42, 1992.
8. B. L. Al'Lshuler, P. A. Lc-e, and R. A. Webb, Eds., Mesoscopic Phenomena in Solids, Amsterdam: North Holland, 1991.
9. M. A. Kastner, "The single electron transistor," Rev. Mod. Phyj., vol. 64, p. 849, 1992.
10. A. Aviram and M. A. Ratner, "Molecular rectifiers," Chem. Phvs. Lett., vol. 29, p. 277, 1974.
11. F. L. Carter, Ed., Molecular Electronic Devices. Xew York: Marcel Dekker, 1982.
12. F. T. Hong, Ed., Molecular Electronics. New York: Plenum, 1989.
13. G. Binnig, H. Rohrer, C. Gerber, and E. Weibel, "Surface studies by scanning tunneling microscope," Phys. Rev. Let.'., vol. 49, p. 57, 1982.
14. G. Galli, R. M. Martin. R. Car, and M. Parrinello, Phvs. Rev. Lett., vol. 62, p. 555, 1989.
15. A. H. Taub, Ed., Collected Works of John von Neumann. New York: Pergamon, 1961.
16. R. W. Hockney and C. R. Jesshope, Parallel Computers 2. New York: Adam Hilger, 1988.
17. H. T. Siegelmann, "Computation beyond the luring limit." Science, vol. 268, p. 545, 1995.
18. [181 R. L. Harvey, Neura! Network Principles. New York: PrenticeHall, 1994.
19. H. ishiwara, "Proposal of adaptive-learning neuron circuits with ferroelectric analog-memory weights," Jan. J. Appl. Phys., vol. 32, no. IB, p. 442, 1993.
20. S.-M. Yoon, E. Tokumitsu, and H. Ishiwara, "An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor i,MFS) FET's using SrBijT^Oc, thin films," IEEE Electron Device Lett., vol. 20, no. 5, p. 229, 1999.
21. J. Gruska, Quantum Computing. New York: McGraw-Hill, 1999.
22. C. H. Bennet and D. P. DiVincenzo, "Quantum information and computation," Nature, vol. 404, p. 247, 2000.
23. Y. Nakamura, Y. A. Pushkin, and J. S. Tsai, "Coherent control of macroscopic quantum states in a single cooper pair box," Nulure, vol. 398, p. 786, 1999.
24. C. S. Lent, P. D. Totigaw, and W. Porod, "Bistable saturation in coupled quantum dots for quantum cellular automata," Appl. Phys. Let!., vol. 62, p. 714, 1993.
25. R. P. Andres, J. B. Bielefeld, J. I. Henderson, D. B. Janes, V. R. Kolagunta, C. P. Kubiak, W. J. Mahoney, and R. G. Osilchin, "Selfassembly of a two-dimensional superlattice of molecularly linked metal clusters," Science, vol. 273, p. 1690, 1996.
26. L. M. Adleman, "Molecular computation of solutions to combinatorial problems," Science, vol. 266, p. 1021. 1994.
27. J. R. Heath, P. J. Kuekes, G. S. Snider, and R. S. Williams, "A defect tolerant architecture: Opportunities for nanotechnology," Science, vol. 280, p. 1716, 1998.
28. J. Kilby, "The invention of the integrated circuit," IEEE Trans. Electron Devices, vol. ED-23, p. 648, 1976.
29. N. G. Einspruch, Ed., VLSI Electronics. New York: Academic, 1981.
30. S. Asai and Y. Wada, "Technology challenges for integration near and below 0.1 microns," Proc. IEEE, vol. 85, p. 505, 1997.
31. R. H. Dennartl, F. H. Gaensslen, H. Yu, V. L. Rideout, E. Bassons, and A. L, LcBlanc, "Design of ion implanted MOSFET's with very small physical dimensions," IEEE J, Solid Stale Circuits, vol. SC-9, p. 256, 1974.
32. M. Hirooka and T. Hagiwara, "Characterization of diffusion trajectory of new products in the course of technological innovation," Kobe Univ. Econ. Rev., vol. 38. p. 47, 1992.
33. [331 The National Technology Roadmap for Semiconductors. San Jose, CA: Semiconductor Industry Association. 1999.
34. B. H. Schechtman, "Long term outlook for magnetic and opticai disk storage tecnnoiogies," in Optical Data Slorage Topicai Meeting, Co/if. Dig., 1997, p. 3.
35. M. H. Kryder, "Data storage in 2000-trends in data storage technologies," IEEE Trans. Magn., vol. MAG-25, no. 6, p. 435, 1989.
36. T. C. Reiiey, T. R. Albrecht, K. Kurcki, D. W. Albrecht, and M. Aoyagi, "Micro drive-a pluggable one-inch disk drive for portable devices," presented at the Proc. Int. Non Volatile Memory Technology Conf., 1998.
37. Y. Wada, "A proposal of atom/molecule switching devices," in Molecular Electroniis-Siience and Technology, A. Aviram and M. Ramer, Eds., 1998, vol. 852, Ann. .New York Academy of Sciences, p. 257.
38. T. Osa and M. Fujihira, "Photocell using covalently-bound dyes on semiconductor surfaces," Nature, vol. 264, p. 349, 1976.
39. M. Fujihira, N. Ohishi, and T. Osa, "Photocell using covalentlybound dyes on Semiconductor surfaces.'1 Nature, vol. 268, p. 226, 1977.
40. A. Kobayashi, F. Grey, R. S. Williams, and M. Aono, "Formation of nanometer-scale grooves in silicon with a scanning tunneling microscope," Science, vol. 259, p. 1724, 1993.
41. D. M. Eigier and E. K. Scweizer, "Positioning single atoms with a scanning tunneling microscope," Nature, vol. 344, p. 524, 1990.
42. Engineering Foundation Conf. Ordered Molecular and Nanoscale Electronics Kona, HI, June 5-10, 1994.
43. NATO Workshop on Atomic and Molecular Wires Des Houches, France, May 6-10, 1996.
44. [441 Conf. Molecular Electronics Puerto Rico, 1997.
45. Conf. Proc. Moleiromcs Reston, VA, 1998.
46. [46l "Symposium H: molecular electronics," presented at the Materials Research Society 1999 Fall Meeting, Boston, MA, Nov. 1999.
47. "Molecular scale electronics symposium," presented at the American Physical Society Meeting, Minneapolis, MN, Mar. 2000.
48. "Ordered molecular films for nano electronics and photonics," presented at the Pacitichem 2000, Joint Int. Meeting American Chemical Society, Honolulu, HI, Dec. 2000.
49. Y. Wada, "A proposal of molecular single electron devices," Trans. IE1CE, vol. OME 93-54, p. 31, 1994.
50. K. K. Likharcv, "Correlated discrete transfer of single electrons in ultrastnall tunnel junctions," IBM J. Ken. Develop., vol. 32, p. 144, 1988.
51. M. I. Lutwyche and Y. Wada, "Estimate of the ultimate performance of the single-electron transistor," J. Appl. Ph\s., vol. 75, p. 3654, 1994.
52. S. Okazaki, "Lithographic technologies for future 1C," Appl. Surf. ScJ.,vol. 70/71, p. 603, 1993.
53. A. N. Broers, A. C. F. Hoole, and J. M. Ryan, "Electron beam lithography-resolution limits," Microeleciron. Eng., vol. 32, p. 131, 1996'
54. H. I. Smith, M. L. Schattenburg, S. D. Hector, J. Ferrera, E. E. Moon, I. Y. Yang, and M. Burkhardt, "X-ray nanolithography: Extension to the limits of the lithographic process," Microelectmn. Eng., vol. 32, p. 143, 1996.
55. Y. Wada, "A proposal of atom electronics based on atom/molecule switching devices," in Atomic and Molecular Wires, C. Joachim, Ed. Dordrecht, The Netherlands: Kluwer, 1997.
56. A. Nitayama, Y. Kohyama, and K. Hieda, "Future directions for DRA.V! memory cell technology," in Tech. Dig., IEEE Int. Electron Devices Meeting, San Francisco, CA, 1998. p. 355.
57. W. N. Carr and J. P. Mize, MOS LSI Design and Application. New York: McGraw-Hill, 1972.
58. J. R. Tucker. "Complementary digital logic based on she coulomb blockade," J. Appl. Phyn., vol. 72,"p. 4399, 1992.
59. M. A. Reed, "Sub-nanoscale electronic systems and devices," U.S. Patent 5589692.
60. A. Aviram and P. Roland, "The effect of electric fields on double-well-potential molecules," in Molecular Electronics-Science and Technology, A. Aviram and M. Ratner, Eds., 1998, vol. 852, Ann. New York Academy of Sciences, p. 339.
61. P. von Allmen and K. Hess. "Dynamics of an atomic switch computed by first-principles molecular dynamics," Phys. Rev. B. vol. B52, p. 5243, 1995.
62. N. D. Lang, "Conductance calculations lor the atomic relay," Superlatt. Microstruct., vol. 23, p. 731. 1998.
63. D. G. Gordon, M. S. Momemerlo, J. C. Love, G. J. Opiteck, and j. C. Ellenbogen, "Overview of nanoelecironic devices," Proc. IEEE, vol. 85, p. 521, 1997.
64. C. Joachim, J. K. Gimzewski, R. R. Schüttle, and C. Chavy, "Electronic transparence of a single C60 molecule," Ph\s. Rev. Lett., vol. 74, no. 11, p. 2102. 1995. "
65. C. Joachim and J. K. Gimzewski, "An electromechanical amplifier using a single molecule," Chem. Phys. Leu., vol. 265. p. 353, 1997.
66. C. Joachim, j K. Gimzewski, and H. Tang, "Physical principles of the single C60 transistor effect," Ptris. Rev. B, vol. 58, no. 24, p. 16407, 1998.
67. J. M. Tour, K. Ko/aki, and J. M. Seminario, "Molecular scale electronics: A synthetic/computational approach to digital computing," J. Amer. Chem. Soc., vol. 120, p. 8486, 1998.
68. L. Jones, D. L. Pearson, j. S. Schumm, and J. M. Tour, "Synthesis of well-defined conjugated oligomers for molecular electronics," Pure Appl. Chem., vol. 68, p. 145, 1996.
69. J. M. Tour, L. Jones, D. L. Pearson, j. S. Lamba, T. P. Burgin, G. M. Whitesides, D. L. Allara, A. N. Parikh, and S. V. Atre, "Self-assembled monolayers and multilayers of conjugated thiols, dithiols and troacethyl-containing adsorbates," J. Amer. Chem. Soc., vol. 117, p. 9529, 1997.
70. A. Gourdon, "Synthesis of conjugated ladder oligomers," in Atomic and Molecular Wires, C. Joachim and S. Roth, Eds. Dordrecht, The Netherlands: Kiuwer, 1997. vol. 3-41, NATO ASI Series.
71. Z. Zhou and R. G. Parr, "New measure of aromaucily: Absolute hardness and relative hardness," J. Amer. Chem. Soc., vol. Ill, p. 7371, 1989.
72. S. Tanaka and Y. Yamashita, "A novel monomer candidate for intrinsically conductive organic polymers based or, nonclassical thiophene," Synth. Met, vol. 84, p. 229, 1997.
73. U. Heber and H. W. Heldt, "The chloroplast envelope: Structure, function and role in leaf metabolism," Ann. Rev. Plant Physio!., vol. 32, p. 139, 1981.
74. J. R. Reimers, T. X. Tu. M. J. Crossley, and N. S. Hush, "Molecular electronic properties of fused rigid porphyrin-oligomer molecular wires," Manotechnology, vol. 7, p. 424, 1996.
75. J. R. Reimers, L. E. Mali, M. J. Crossley, and K. S. Hush, "Rigid fused oligoporphyrins as potential versatile molecular wires," J. Phys. Chem. A, vol. 103, p. 4385, 1999.
76. N. Aratani, A. Osuka, Y. H. Kirn, D. H. Jeong, and D. Kirn, "Extremely long discrete meso-meso coupled porphyrin arrays," Angew. Chem., Int. Ed. Engi, vol. 39, p. 1458, 2000.
77. J. W. Lyding, T.-C. Shen, J. S. Huhacek, .1. R. Tucker, and G. C. Abeln, "Nanoscale patterning and oxidation of H-passivated Si (100) -2 x 1 surfaces with an ultrahigh vacuum scanning tunneling microscope," Appl. Phys. LKîL, vol. 64. p. 2010. 1994.
78. T. Hashizume, S. Heike, M. I. Lutwyche, S. Watanabe, K. Nakajima, T. Nishi, and Y. \Vada, "Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Stil00) surface." Jpn. J. Appl. Phys., vol. 35, p. L1085, 1996.
79. S. Watanabe, Y. Ono, T. Hashizume, and Y. Wada, "Theoretical study of atomic and electronic structure of atomic wires or, a hydrogenterminated si (100)2 X 1 surface," Phys. Rev. B., vol. 54, no. 24, p. 17308, 1996.
80. T. Yamada, C. W. Bauschlicher, Jr., and H, Partridge, "Substrate for atomic chain electronics," fnvs. Rev. B, vol. 59, no. 23, p. 15430, 1999.
81. M. A. Reed, "Molecular scale electronics," Proc. IEEE, vol. 87, p. 652, 1999.
82. L. L. Chang, L. Esaki, and R. Tsu, "Resonant tunneling in semiconductor double barriers," Appl. Phys. Leli., vol. 24, no. 12, p. 593, 1974.
83. M. Kinoshita, P. Turek, M. Tamura, K. Nozawa, D. Shiomi, Y. Nakazawa, M. Ishikawa, M. Takahashi, K. Awaga, T. Inabe, and Y. Murayama, "An organic radical ferromagnet," Chem. lei, p. 1225, 1991.'
84. Y. Nakazawa, M. Tamura, N. Shirakawa, D. Shiomi, M. Takahashi, M. Kinoshita, and M. Ishikawa, "Low temperature magnetic properties of the ferromagnetic organic radical, /)-nitrophenyl nitronyi nitroxide," Phys. Rev. B, vol. 46, p. 8906, 1992.
85. M. Matsushita. A. Szuoka, T. Sugawara, T. Kobayashi, N. Wada, N. Takeda, and M. Ishikawa. "Hydrogen bonded organic ferromagnet," J. Amer. Chem. Soc., vol. 119, p. 4369, 1997.
86. T. Sugawara, "High spin electronic states controlled by organic redox processes." Proc. Appl. Magnetic Soc., vol. MSJ102, p. 25, 1997.
87. G. A. Prinz, "Magnctoelectronics," Science, vol. 282, p. 1660, 1998.
88. [S81 S. lijima, "Helical nucrolubes of graphitic carbon." Nature, vol. 354, p. 56, 1991.
89. R. Saito, G. Dresselhaus, and M. Dresseihaus, Physical Properties of Carbon Nanotubes. London, U.K.: Imperial College Press, 1998.
90. S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley, L. J. Geerligs, and C. Dekker, "Individual single-wall carbon nanotubes as quantum wires," Nature, vol. 386, p. 474, 1997.
91. P. G. Collins, A. Zitti, H. Bande, A. Thess, and R. E. Smalley, "Nanorube nanodevice," Science, vol. 278, p. 100, 1997.
92. R. Martel, T. Schmidt. H. R. Shea, T. Herteî, and Ph. Avouris, "Single- and multi-wall carbon nanotube field effect transistors," Appl. Phys. Let:., vol. 73. no. 17, p. 2447, 1998.
93. S. J. Tans, A. R. M. Verschueren, and C. Dekker. "Room-temperature transistor based on a single carbon nanolube," Nature, vol. 393, p. 49, 1998.
94. S. J. Tans and C. Dekker, "Molecular transistors: Potential modulation along carbon nanotubes," Nature, vol. 404, p. 834, 2000.
95. Y. Zhang, T. Ichihashi. E. Landree, F. Nihey, and S. lijima, "Heterostructurcs of single-walled carbon nanotubes and carbide nanorods," Science, vol. 285, p. 1719, 1999.
96. K. Tsukagoshi, B, W. Alphenaar, and H. Ago, "Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube," Nature, vol. 401, p. 572, 1999.
97. S. Roche and R. Saiio, "Effects of magnetic field and disorder on the electronic properties of carbon nanotubes," Phys. Rev. B, vol. 59, no. 7, p. 5242, 1999.
98. J. Hu, M. Ouyang, P. Yang, and C. M. Lieber, "Controlled growth and electronic properties of heterojunctions of carbon nanotubes and silicon nanowires," Nature, vol. 399, p. 48, 1999.
99. D. Srivastava, S. Saini, and M. Menon, "Carbon nanotubes: molecular electronic components," in Molecular Electronics-Science and Technology, A. Aviram and M. Ratner, Eds., 1998, vol. 852, Ann. New York Academy of Sciences, p. 178,
100. Y. Saito, S. Uemura, and K. Hashiguchi, "Cathode ray tube lighting elements with carbon nanotube field emitters," Jpn. J. Appl. Phys., vol. 37, no. 3B, p. L346, 1998.
101. S. Fan, M. G. Chapline, N. K Franklin, T. W.Tombler, A. M. Casse)!, and H. Dai, "Self-oriented regular array of carbon nanotubes and their field emission properties," Science, vol. 283, p. 512, 1999.
102. H. Nfishijima, S. Akita, and Y. Nakayama, "Novel process for fabricating nanodevices consisting of carbon nanotubes," Jpn. J. Appl. Phys., vol. 38, no. 12B, p. 7247, 1999.
103. VI. Fujihira, "Molecular photodiodes with Langmuir-Blodgett films driven by scanning probe microscopy," in Molecular ElectronicsScience and Technology, A. Aviram and M. Ratner, Eds., 1998, vol. 852, Ann. New York Academy of Sciences, p. 306.
104. E. Betzig and J. K. Trautman, "Near field optics: Microscopy, spectroscopv and surface modification beyond the diffraction limit," Science, vol. 257, p. 189, 1992.
105. E. Betzig and R. J. Chichester, "Single molecules observed by near field scanning optical microscopy," Science, vol. 262, p. 422, 1993.
106. [ 106] Y. Ohmori, K. Tada, M. Yoshida, A. Fujii, and K. Yoshino, "Carrier transport in a three layered electroluminescent device," J. Phys. D, vol. 29, p. 2983. 1996.
107. T. Tsutsui, "Progress in electroluminescent devices using molecular thin films," MRS Bull., p. 39, June 1997.
108. "Special issue on organic and polymeric active devices," IEEE Trans. Electron Deuces, vol. 44, no. 8, 1997.
109. K. Matsushige, H. Yamada, H. Tada, T. Horiuchi, and X. Q. Chen, "Nanoscopic molecular memories," in Molecular Electronics-Science and Technology, A. Aviram and M. Ratner, Eds., 1998, vol. 852, Ann. New York Academy of Sciences, p. 290.
110. X. Chen, H. Yamada, T. Horiuchi, and K. Matsushige, "Investigation of surface potential of ferroelectric organic molecules by scanning probe microscopy," Jpn. J. Appl. Phys., vol. 38, no. 6B, p. 3932, 1999.
111. K. Matsushige, Private communication.
112. K. Matsushige and S. Tarn, "The possibility of nanoscopic molecular architecture with novel electric function," Mol. Cryst. Liq. Crysl, vol. 247, p. 203, 1994.
113. L. P. Ma, W. J. Yang, S. S. Xie, and S. J. Pang, "Ultrahigh density data storage from local polymerization by a scanning tunneling microscope," Appl. Pins. Lett., vol. 73, no. 22, p. 3303, 1998.
114. H. J. Mamin, B. D. Terris, L. S. Fan, S. Hoen, R. C. Barrett, and D. Ruger, "High density data storage using proximal probe techniques," IBMJ. Res. Develop., vol. 39, no. 6, p. 681, 1995.
115. H. J. Mamin, R. P. Ried, and D. Ruger, "High-Density data storage based on the atomic force microscope," P roc. IEEE, vol. 87, no. 6, p. 1014, 1999.
116. Y. Wada, "Possible application of micromachine technology to nanometer lithograph)," Microelectronic J.. vol. 29, p. 60, 1998.
117. S. C. Minne, P. Flueckiger, H. T. Soli, and C. Quate, "Atomic force microscope lithography using amorphous silicon as a resist and advances in parallel operation." J. Vac. Sei. Techno!. B, vol. 13, no. 5, p. 1380, 1995.
118. L. Lundstrom, T. Ederth, H. Kariis, H. Sandgren, A. Spetz, and F. Winquist, "Recent developments in field-effect gas sensors," Sens. Actuators 8, vol. 23, p. 127, 1995.
119. Dig. Tech. Papers, 1 Oth Int. Conf. Solid-State Sensors and Actuators, Tokyo, Japan, 1999.
120. K. Eric Drexler, Nanosyslems: Molecular Machinery, Manufacturing, and Computation, New York: Wiley Interscience, 1992.
121. M. Magoga andC. Joachim, "Conductance and transparence of long molecular wires," Pliys. Rev. B, vol. B56, p. 4722, 1997.
122. S. B. Sachs, S. P. Dudek, R. P. Hsung, L. R. Sita, J. J. Smalley, M. D. Newton, S. W. Feldberg, and C. B. D. Chidsey, "Rates of interfacial electron transfer through P-conjugated spacers," J. Amer. Chem. So:., vol. 119, no. 43, p. 10563, 1997.
123. S. N. Yaliraki and M. A. Ratner, "Molecule-interface coupling effects on electronic transport in molecular wires," J. Chem, Phys., vol. 109, p. 5036, 1998.
124. S. N. Yaliraki, M. Kemp, and M. A. Ratner, "Conductance of molecular wires: Influence of molecule-electrode biding," / Amer. Chem. Hoc., vol. 121. p. 3428, 1999.
125. S. Nakanishi and M. Tsukada, "Large loop current induced inside the molecular bridge," Jpn. J. Appl. Phys., vol. 37, no. 1 IB, p. LI400, 1998.
126. _, "Theory of quantum transport and internal current induced inside the molecular bridge," Phys. Rev. B, to be published.
127. R. .VI. Metzger, B. Chen, U. Hopfner, M. V. Lakshmikanlham, D. Vuillaume, T. Kawai, X. \Vu, H. Tachibana, T. V. Hughes, H. Sakurai, J. W. Baldwin, C. Hosch, M. P. Cava, L. Brehmer, and G. Ashwell, "Unimolecular electrical rectification in hexadecyl-quinolium tricyano-quinodimethanide," J. Amer. Chem. Soc., vol. i 19, p. 10455, 1997.
128. M. A. Reed, C. Zhoit, M. R. Desnpande, J. C. Müller, T. P. Burgm, L. Jones, and J. M. Tour, "The electrical measurement of molecular junctions," in Mol. Electwn.-Sci. Techno'., A. Aviram and M. Ratner, Eds., 1998, vol. 852, Ann. New York Academy of Sciences, p. 133.
129. K. Slowinski, H. K. Y. Fong, and M. Majda, "Mercury-Mercury tunneling junctions. 1. Electron tunneling across symmetric and asymmetric alkaiiethiolate bilayers," J. Amer. Chem. Soc., vol. 121, no. 31, p. 7257, 1999.
130. C. P. Collier, E. W. Wong, M. Belohradsky, F. M. Raymo, J. F. Stoddart, P. J Kuekes, R. S. Williams, and 1. R. Heath. "Electronically configurable molecular-based logic gates,'" Science, vol. 285, p. 391, 1999.
131. V. Rousset, C. Joachim, B. Roussel, and T. Ondarcuhu, "Coplanar nanojunction to connect a single molecule," in Atomic and Molecular Wires, C. Joachim and S. Roth, Eds. Dordrecht, The Netherlands: Kluwer, 1997, vol. 341, NATO ASI Series, p. 139.
132. S. H. M. Persson, L. Olofsson, L. Hedberg, D. Sutherland, and E. Olsson, "A self-assembled single electron tunneling device," in Mol. Ekctron.-Sci. Technol, A. Aviram and M. Ratner, Eds., 1998, vol. 852, Ann. Xew York Academy of Sciences, p. 18S.
133. C. Dekker, S. J. Tans, L. J. Geerligs, and A. Bezryadin, "Toward electrical transport on single molecules,'' in Atomic and Molecular Wires, C. Joachim and S. Roth, Eds. Dordrecht, The Netherlands: Kluwer, 1997, vol. 341, NATO AS! Series.
134. C. Joachim. Private communication.
135. M. A. Reed, C. Z'nou, C. J. Müller, T. P. Burgin, and J. M. Tour, "Conductance of a molecular junction," Science, vol. 278, p. 252, 1997.
136. [ 136j L. A. Bumm, J. J. Arnold, M. T. Cygan, T. D. Dunbar, T. P. Burgin, L. Jones !!, D. L. Alla, J. M. Tour, and P. S. Weiss, "Are single molecular wires conductive?," Science, vol. 271. p. 1705. 1996.
137. S. Heike, T. Hashizurne, and Y. Wada, "Ir. situ direct imaging of scanning tunneling microscope tip apex." Jpn. .J. Appl. Phys., vol. 34, p. L1061, 1995.
138. _, "Nanoneedle formation on silicon (111) surface using a scanning tunneling microscope tip," J. Appl. Phys., vol. SO, p. 4182, 1996.
139. H. Dai, N. Franklin, and J. Haii, "Exploiting the properties of carbon nanotubes for nanolilhouraphy,"AppJ. Phvs. Lett., vol. 73, no. 11, p. 1508. 1998.
140. H. Fujita, "Recent progress in micromachining and applications to microactuators," Jpn J, Appl. Phys., vol. 33. p. 7163, 1995.
141. M. I. Lutwyche and Y. Wada, "Manufacture of microtnechanical scanning tunneling microscopes for observation of the tip apex in a transmission electron microscope," Sens. Actuators, vol. A48, p. 127, 1995.
142. _, "Observation of vacuum tunneling gap of a scanning tunneling microscopes in a transmission electron microscope," Appl. Phvs. Let!., vol. 48, p. 1027, 1995.
143. Y. Wada, "A prospect for single moiecule information processing devices," Pure Appl. Chem., vol. 71, no. 11, p. 2055, 1999.
144. T. Ogawa, Private communication.
145. M. A. Reed, "Sub-nanoscale electronic systems and devices," U.S. Patent 5475341.