Self-oriented regular arrays of carbon nanotubes and their field emission properties

Science

Volumn 283, Issue 5401, 1999, Pages 512-514

  Fan, Shoushan ^a   Chapline, Michael G ^a   Franklin, Nathan R ^a   Tombler, Thomas W ^a   Cassell, Alan M ^a   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; PARTICLE SIZE ANALYSIS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

CATALYTIC PARTICLE SIZE CONTROL; ELECTRON FIELD EMISSION ARRAYS; MONODISPERSED CARBON NANOTUBES;

NANOTUBES;

NANOPARTICLE; SILICON;

ARTICLE; CATALYSIS; DEVICE; DISPERSION; ELECTRON BEAM; ORIENTATION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 0033593584     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.283.5401.512     Document Type: Article

References (31)

1. R. Service, Science 281, 940 (1998).
2. H. Dai et al., Nature 384, 147 (1996).
3. S. Wong et al., J. Am. Chem. Soc. 120, 603 (1998).
4. S. Wong et al., Nature 394, 52 (1998).
5. H. Dai et al., Appl. Phys. Lett. 73, 1508 (1998).
6. W. A. de Heer et al., Science 270, 1179 (1995).
7. P. G. Collins and A. Zettl, Appl. Phys. Lett. 69, 1969 (1996).
8. Q. Wang et al., ibid. 72, 2912 (1998).
9. Q. H. Wang et al., ibid. 70, 3308 (1997).
10. J-M. Bonard et al., ibid. 73, 918 (1998).
11. Y. Saito et al., Ultramicroscopy 73, 1 (1998).
12. S. Tans et al., Nature 393, 49 (1998).
13. W. Li et al., Science 274, 1701 (1996).
14. Z. Pan et al., Nature 394, 631 (1998).
15. M. Terrones et al., ibid. 388, 52 (1997).
16. M. Terrones et al., Chem. Phys. Lett. 285, 299 (1998).
17. Z. F. Ren et al., Science 282, 1105 (1998).
18. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
19. R. T. Collins et al., Phys. Today 50, 24 (1997).
20. J.-C. Vial and J. Derrien, Eds., Porous Silicon Science and Technology: Winter School, Les Houches, 1994 (Springer-Verlag, Berlin, 1994).
21. R. L. Smith and S. D. Collins, J. Appl. Phys. 71, R1 (1992).
22. G. Che et al, Nature 393, 346 (1998).
23. T. Kyotani et al., Chem. Mater. 8, 2109 (1996).
24. S. Amelinckx et al., Science 265, 635 (1994).
25. R. T. K. Baker, Carbon 27, 315 (1989).
26. G. G. Tibbetts, J Cryst. Growth 66, 632 (1984).
27. J. Kong et al., Chem. Phys. Lett. 292, 567 (1998).
28. We have grown regular arrays of oriented nanotube blocks on plain Si(100) substrates (we typically use B-doped p-type wafers, resistivity 5 to 10 ohm·cm). The overall structures of the nanotube blocks are similar to those grown on porous silicon. However, in contrast to porous silicon, we often find many nanotube towers with aspect ratio ≥ 5 falling onto the surface. This indicates weaker interactions at the interfaces between the nanotubes and the flat silicon surface. Also, the nanotubes appear to be less well aligned on plain silicon substrates than on the porous silicon. TEM studies show that the nanotubes synthesized on plain silicon substrates have larger diameters and broader diameter distributions than those on porous silicon.
29. The growth rate seems to be linear initially and tends to level off at longer time reactions (S. Fan, M. Chapline, N. Franklin, H. Dai, unpublished data).
30. D. Normile, Science 281, 632 (1993).
31. S.F. is on leave from the Department of Physics, Tsinghua University, Beijing, China. We thank C. Quate and H. Soh for helpful discussions. Supported by NSF, a Camille and Henry Dreyfus New Faculty Award, the American Chemical Society-Petroleum Research Fund, and the Center for Materials Research at Stanford University.