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Volumn 32, Issue 1-4 SPEC. ISS., 1996, Pages 131-142

Electron beam lithography - Resolution limits

Author keywords

Electron beam lithography; Irradiated SiO2; PMMA; Resolutions limits

Indexed keywords

ELECTRON OPTICS; OPTICAL RESOLVING POWER; POLYMETHYL METHACRYLATES; RADIATION DAMAGE; RESISTORS; SILICA;

EID: 0030231574     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00368-1     Document Type: Article
Times cited : (181)

References (25)
  • 17
    • 85029992079 scopus 로고    scopus 로고
    • private communication, to be published
    • M.N. Kozicki, private communication, to be published.
    • Kozicki, M.N.1
  • 24
    • 0029770960 scopus 로고    scopus 로고
    • Fabrication of 3 nm wires using 100 keV electron beam lithography and poly (methyl methacrylate) resist
    • D.R.S. Cumming, J.M.R. Weaver, S. Thomas and S.P. Beaumont, Fabrication of 3 nm wires using 100 keV electron beam lithography and poly (methyl methacrylate) resist, Microelectronic Engineering 30 (1996) 423-425.
    • (1996) Microelectronic Engineering , vol.30 , pp. 423-425
    • Cumming, D.R.S.1    Weaver, J.M.R.2    Thomas, S.3    Beaumont, S.P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.