메뉴 건너뛰기




Volumn 73, Issue 11, 1998, Pages 1508-1510

Exploiting the properties of carbon nanotubes for nanolithography

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000662939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122188     Document Type: Article
Times cited : (230)

References (24)
  • 15
    • 21544472166 scopus 로고    scopus 로고
    • note
    • All lithography experiments were done under ambient conditions with ∼40% humidity. N-type Si(100) wafers (resistivity ∼1 cm) were etched in a dilute HF solution to obtain H-Si.
  • 16
    • 21544435808 scopus 로고    scopus 로고
    • note
    • Previous studies predicted that the highest scanning speed for silicon anodization is ∼1 mm/s (see Refs. 3 and 5). The tip and sample must be in close proximity (∼1 Å) over a threshold time. Consistent with these results, we found it necessary to keep the cantilever amplitude below 1 nm to achieve anodization with high speed (1-10 μm/s) in tapping-mode AFM scanning.
  • 18
    • 21544465409 scopus 로고    scopus 로고
    • note
    • The multi-walled carbon nanotube tips have an average diameter of ∼10 nm. A single-walled nanotube tip should allow ∼10 Å resolution.
  • 22
    • 21544472994 scopus 로고    scopus 로고
    • note
    • Preliminary MD simulations find that in order for two nanotubes (2 nm in diameter) with a 1 μm contact length to slide over each other, a shear force on the order of 80 nN is required.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.