X-ray nanolithography: Extension to the limits of the lithographic process

Microelectronic Engineering

Volumn 32, Issue 1-4 SPEC. ISS., 1996, Pages 143-158

  Smith, Henry I ^a   Schattenburg, Mark L ^a,b   Hector, Scott D ^a,c,e   Ferrera, Jaun ^a   Moon, E E ^a   Yang, I Y ^a   Burkhardt, M ^a,d  

^a USA   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c MOTOROLA INC   (United States)

^d TEXAS INSTRUMENTS   (United States)

^e IBM   (United States)

Author keywords

X ray nanolithography

Indexed keywords

ALIGNMENT; EFFICIENCY; MOSFET DEVICES; NANOTECHNOLOGY; OPTICAL RESOLVING POWER; OPTOELECTRONIC DEVICES; PATTERN RECOGNITION;

X-RAY NANOLITHOGRAPHY;

X RAY LITHOGRAPHY;

EID: 0030231816     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00183-2     Document Type: Article

References (71)

1. L.K. Wang, J. Silverman, D. Seeger, E. Petrillo, V. DiMilia, D. Katcoff, K, Kwietniak, R. Acosta, K. Petrillo, S. Brodsky, I. Babich, O. Vladimirsky, H. Voelker, R. Viswanathan, J. Warlaumont, A. Wilson, R. Devenuto, B. Hill, L.C. Hsia, R. Rippstein and C. Wasik, J. Vac. Sci. Technol. B 7 (1989) 1662.
2. K. Deguchi, K. Miyoshi, H. Ban, T. Matsuda, T. Ohno and Y. Kado, J. Vac. Sci. Technol. B 13 (1995).
3. R. Viswanathan, D. Seeger, A. Bright, A. Pomerene, K. Petrillo, P. Blauner, P. Agnello and J. Warlaumont., J. Vac. Sci. Technol. B 11 (1993) 2910.
4. H.I. Smith and M.L. Schattenburg, IBM J. Res. and Dev. 37 (1993) 319.
5. Y. Chen, R.K. Kupka, F. Rousseaux, F. Carcenac, D. Decanini, M.F. Ravet and H. Launois, J. Vac. Sci. Technol. B 12 (1994) 3959.
6. T. Horiuchi, K. Deguchi, S. Hirota and A. Yoshikawa, Microelectronic Engineering 13 (1991) 315.
7. D.L. Spears and H.I. Smith, Electron. Lett. 8 (1972) 102.
8. R. Feder, E. Spiller and J. Topalian, J. Vac. Sci. Technol. 12 (1975) 1332.
9. K. Early, M.L. Schattenburg and H.I. Smith, Microelectronic Engineering 11 (1990) 317-321.
10. K. Deguchi, T. Ishiyama, T. Horiuchi and A. Yoshikawa, Proc. of 1990 International MicroProcess Conf., Japan J. Appl. Phys. Series 4 (1990) 100-104.
11. K. Murata, J. Appl. Phys. 57 (1985) 575-580; K. Murata, M. Tanaka and H. Kawata, Optik 84 (1990) 163-168.
12. K. Murata, J. Appl. Phys. 57 (1985) 575-580; K. Murata, M. Tanaka and H. Kawata, Optik 84 (1990) 163-168.
13. L.E. Ocola and F. Cerrina, J. Vac. Sci. Technol. B 11 (1993) 2839.
14. D.C. Flanders, Appl. Phys. Lett. 36 (1980) 93.
15. T. Ogawa, K. Mochiji, Y. Soda and T. Kimura, Proc. 1989 Intern. Symp. on MicroProcess Conference, Japan J. Appl. Phys. Series 3 (1989) 120-123.
16. S.D. Hector, H.I. Smith and M.L. Shattenburg, J. Vac. Sci. Technol. B 11 (1993) 2981.
17. S.D. Hector, Ph.D. Thesis, MIT, 1994.
18. B.J. Lin, Microelectronic Engineering 11 (1990) 137; B.J. Lin, Proc. SPIE 1263 (1990) 80.
19. B.J. Lin, Microelectronic Engineering 11 (1990) 137; B.J. Lin, Proc. SPIE 1263 (1990) 80.
20. H.K. Oertel, M. Weiss, H.L. Huber, Y. Vladimirsky and J.R. Maldonado, Proc. SPIE 1465 (1991) 244.
21. J.Z.Y. Guo, F. Cerrina, E. Difabrizio, L. Luciani, M. Gentili and D. Gerold, J. Vac. Sci. Technol. B 10 (1992) 3150.
22. S.D. Hector, M.L. Schattenburg, E.H. Anderson, W. Chu, V.V. Wong and H.I. Smith, J. Vac. Sci. Technol. B 10 (1992) 3164.
23. M.L. Schattenburg, K. Li, R.T. Shin, J.A. Kong and H.I. Smith, Electromagnetic calculation of soft-x-ray diffraction from 0.1 μm gold structures, J. Vac. Sci. Technol. B 9 (1991) 3232-3236.
24. W. Chu, H.I. Smith and M.L. Schattenburg, Replication of 50 nm linewidth device patterns using proximity x-ray lithography at large gaps, Appl. Phys. Lett. 59 (1991) 1641-1643.
25. Y.C. Ku, E.H. Anderson, M.L. Schattenburg and H.I. Smith, J. Vac. Sci. Technol. B 6 (1988) 150.
26. Y. Somemura, K. Deguchi, K. Miyoshi and T. Matsuda, Japan J. Appl. Phys. 31 (1992) 4221; Y. Somemura and K. Deguchi, Japan J. Appl. Phys. 31 (1992) 938.
27. Y. Somemura, K. Deguchi, K. Miyoshi and T. Matsuda, Japan J. Appl. Phys. 31 (1992) 4221; Y. Somemura and K. Deguchi, Japan J. Appl. Phys. 31 (1992) 938.
28. J. Xiao, M. Kahn, R. Nachman, J. Wallace, Z. Chen and F. Cerrina, J. Vac. Sci. Technol. B 12 (1994) 4038.
29. M. Taniguchi, R. Funatsu, A. Inagaki, K. Okamoto, Y. Kenbo, Y. Kato and I. Ochiai, x-ray exposure system with plasma source for microlithography, SPIE 1089 (1989) 240.
30. 2 snow, J. Vac. Sci. Technol. B 9 (1991) 1970.
31. D.L. Laird, M.F. Laudon and R.L. Englestad, J. Vac. Sci. Technol. B 11 (1993) 2953.
32. P.A. Seese, K.D. Cummings, D.J. Resnick, J. Wallace, G.M. Wells and A.W. Yanof, SPIE 1924 (1993) 457-466.
33. A.M. Haghiri-Gosnet, F.R. Ladan, C. Mayeux, H. Launois and M.C. Joncour, J. Vac. Sci. Technol. B 7 (1989) 2663.
34. Y.C. Ku, Lee-Peng Ng, R. Carpenter, K. Lu, H.I. Smith, L.E. Haas and I. Plotnik, J. Vac. Sci. Technol. B 9 (1991) 3297-3300.
35. A.W. Yanof, D.J. Resnick, C.A. Jankowski and W.A. Johnson, Proc. SPIE 632 (1986) 118.
36. Y.C. Ku, M.H. Lim, J.M. Carter and H.I. Smith, J. Vac. Sci. Technol. B 10 (1992) 3169.
37. M. Mondol, H. Li, G. Owen and H.I. Smith, J. Vac. Sci. Technol. B 12 (1994) 4024.
38. J.A. Liddle and C.A. Volkert, J. Vac. Sci. Technol. B 12 (1994) 3528.
39. W.J. Dauksher, D.J. Resnick, K.D. Cummings, J. Baker, R.B. Gregory, N.D. Theodore, J.A. Chan, W.A. Johnson, C.J. Mogab, M.A. Nicolet and J.S. Reid, J. Vac. Sci. Technol. B 13 (1995) 3103-3108.
40. T. Inoue, T. Kanayama and M. Komuro, J. Vac. Sci. Technol. B 11 (1993) 2943.
41. Y.C. Ku, H.I. Smith and I. Plotnik, Low stress Tungsten absorber for x-ray masks, Microelectronic Engineering 11 (1990) 303-308.
42. M. Itoh and M. Hori, J. Vac. Sci. Technol. B 9 (1991) 165.
43. MicroSi MS-805 Adhesion Promoter solution for noble metal substrates, Huls America, Bristol, PA.
44. Sel-Rex BDT-510 Plating Solution, OMI International Corp., Nutley, NJ.
45. H.I. Smith, S.D. Hector, M.L. Schattenburg and E.H. Anderson, J. Vac. Sci. Technol. B 9 (1991) 2992-2995.
46. J. Ferrera, V.V. Wong, S. Rishton, V. Boegli, E.H. Anderson, D.P. Kern and H.I. Smith, J. Vac. Sci. Technol. B 11 (1993) 2342.
47. W. Wong, J. Ferrera, J.N. Damask, T.E. Murphy and H.I. Smith, J. Vac. Sci. Technol. B 13 (1995) 2859-2864.
48. W.A. Johnson, R.E. Acosta, B.S. Berry, W.C. Pritchet, D.J. Resnick and W.J. Dauksher, J. Vac. Sci. Technol. B 10 (1992) 3155; W.J. Dauksher, D.J. Resnick, W.A. Johnson and A.W. Yanof, Microelectronics Engineering 23 (1994) 235.
49. W.A. Johnson, R.E. Acosta, B.S. Berry, W.C. Pritchet, D.J. Resnick and W.J. Dauksher, J. Vac. Sci. Technol. B 10 (1992) 3155; W.J. Dauksher, D.J. Resnick, W.A. Johnson and A.W. Yanof, Microelectronics Engineering 23 (1994) 235.
50. S. Ishihara, M. Kanai, A. Une and M. Suzuki, J. Vac. Sci. Technol. B 6 (1989) 1652.
51. G. Chen, J. Wallace, F. Cerrina, S. Palmer, B. Newell and J. Randall, J. Vac. Sci. Technol. B 6 (1991) 3222-3226.
52. K. Deguchi, K. Miyuoshi, H. Ban, H. Kyuragi, S. Konaka and T. Matsuda, J. Vac. Sci. Technol. B 10 (1992) 3145.
53. E.E. Moon, P.N. Everett, and H.I. Smith, J. Vac. Sci. Technol. B 13 (1995) 2648-2652.
54. S.Y. Chou, D.A. Antoniadis and H.I. Smith, IEEE Elect. Dev. Lett. 6 (1985) 665.
55. G.G. Shahidi, D.A. Antoniadis, and H.I. Smith, J. Vac. Sci. Technol. B 6 (1988) 137.
56. J.H.F. Scott-Thomas, S.B. Field, M.A. Kastner, H.I. Smith and D.A. Antoniadis, Phys. Rev. Lett. 62 (1989) 583.
57. A.C. Warren, D.A. Antoniadis, H.I. Smith and J. Melngailis, IEEE Elect. Dev. Lett. 6 (1985) 294.
58. K. Ismail, P.F. Bagwell, T.P. Orlando, D.A. Antoniadis and H.I. Smith, Proc. IEEE 79 (1991) 1106-1116.
59. W. Chu, C.C. Eugster, A. Moel, E.E. Moon, J.A. del Alamo, H.I. Smith, M.L. Schattenburg, K.W. Rhee, M.C. Peckerar and M.R. Melloch, J. Vac. Sci. Technol. B 10 (1992) 2966.
60. I.Y. Yang, H. Hu, L.T. Su, V.V. Wong, M. Burkhardt, E.E. Moon, J. Carter, D.A. Antoniadis, H.I. Smith, K.W. Rhee and W. Chu, J. Vac. Sci. Technol. B 12 (1994) 4051.
61. I.Y. Yang, J.M. Carter, S.E. Silverman, S. Rishton, D.A. Antoniadis and H.I. Smith, J. Vac. Sci. Technol. B 13 (1995) 2741-2744.
62. V.V. Wong, Ph.D. Thesis, MIT, 1995.
63. V.V. Wong, A. Yasaka and H.I. Smith, J. Vac. Sci. Technol. B 13 (1995) 2797-2800.
64. V.V. Wong, J. Fererra, J. Damask, J. Carter, E.E. Moon, H.A. Haus, H.I. Smith and S. Rishton, J. Vac. Sci. Technol. B 12 (1994) 3741.
65. M. Burkhardt, H.I. Smith, D.A. Antoniadis, T.P. Orlando, M.R. Melloch, K.W. Rhee and M.C. Peckerar, J. Vac. Sci. Technol. B 12 (1994) 3611.
66. G. Shmahl, D. Rudolph, B. Niemann, P. Guttman, J. Theime, G. Schneider, C. David, M. Diehl and T. Wilhelm, Optik 93 (1993) 95.
67. J. Kirz, C. Jacobsen and M. Howells, Quart. Rev. Biophysics 28 (1994) 33.
68. S.D. Hector and H.I. Smith, in: A.M. Hawryluk and R.H. Stulen, eds., OSA Proc. on Soft-X-ray Projection Lithography, Vol. 18 (Opt. Soc. America, Washington, DC, 1993) 202.
69. M. Feldman, in A.M. Hawryluk and R.H. Stulen, eds., OSA Proc. on Soft-X-ray Projection Lithography, Vol. 18 (Opt. Soc. America, Washington, DC, 1993) 207.
70. D.T. Atwood, Private communication.
71. Aurora 2D, Sumitoma Heavy Industry, Tokyo, Japan.