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Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1211-1213

Deep level defects in n-type GaN grown by molecular beam epitaxy

(7) Wang, C D a Yu, L S a Lau, S S a Yu, E T a Kim, W b Botchkarev, A E c Morkoc H c

a UNIVERSITY OF CALIFORNIA (United States)

b University of Illinois at Urbana Champaign (United States)

c Virginia Commonwealth University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001422563 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.121016 Document Type: Article

Times cited : (117)

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