Electrical characterization of sputter deposition induced defects in n-GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Auret, F D ^a   Goodman, S A ^a   Koschnick, F K ^b   Spaeth, J M ^b   Beaumont, B ^c   Gibart, P ^c  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF PADERBORN   (Germany)

^c CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHASE SEPARATION; SILICON CARBIDE; SOLID SOLUTIONS; SOLUBILITY; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); LATTICE MISMATCH; REACTANTS;

GALLIUM NITRIDE;

EID: 3442895425     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003136     Document Type: Conference Paper

References (18)

1. S. Nakamura and G. Fasol, in "The blue laser diode", (Springer Verlag, 1997).
2. K. Doverspike, A. E. Wickenden, S. C. Binarii, D. K. Gaskill and J. A. Freitas, Mat. Res. Soc. Symp. Proc. Vol. 395, p897 (1996).
3. L. I. Maissel: in "Handbook of thin film technology", (ed. L. I. Maissel and R. Glan), 1-4; 1970, New York, McGraw-Hill.
4. F. H. Mullins and A. Brunnschweiler, Solid State Electron. 19, 47 (1976).
5. E. Grussell, S. Berg and L. P. Andersson, J. Electrochem. Soc. 127, 1573 (1980).
6. D. A. Vanderbroucke, R. L. van Mierhaegte, W. H. Lafrere and F. Cardon, Semicond. Sci. Technol. 2, 293 (1987).
7. S. J. Fonash, S. Ashok and R. Singh, Appl. Phys. Lett. 39, 423 (1981).
8. F. D. Auret, S. A. Goodman, Y. Leclerc, G. Myburg and C. Schutte, Materials Science and Technology 13, 945 (1997).
9. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
10. P. Hacke, T. Detchprohm, K. Hiramatsu and N. Sawaki, Appl. Phys. Lett. 63, 2676, (1993).
11. S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z.-F. Fan, S. N. Mohammed, W. Kim, A. E. Botchkarev and H. Morkoc, Appl. Phys. Lett. 69, 1556, (1996).
12. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo and K. Miyake, J. Appl. Phys. 76, 304 (1994).
13. W. Götz, N. M. Johnson, H. Amano and I. Akasaki, Appl. Phys. Lett. 65, 463 (1994).
14. Q. Y. Ma, M. T. Schmidt, X. Wu, H. L. Evans and E. S. Yang, J. Appl. Phys. 64, 2469 (1988).
15. F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, B. Beaumont and P. Gibart, Appl. Phys. Lett. (L98-6265), January18, 1999.
16. Z-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev and H. Morkoc, Appl. Phys. Lett. 72, 2277 (1998).
17. D. Haase, M. Schmid, W. Kürner, A. Dornen, V. Härle, F. Scholtz, M. Burkard and H. Schweitzer, Appl. Phys. Lett. 69, 2525 (1996).
18. F. D. Auret, G. Myburg, S. A. Goodman, L. J. Bredell and W. O. Barnard, Nucl. Instr. and Meth. in Phys. Res. B67, 411 (1992).