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Volumn 24, Issue 4, 1995, Pages 303-309
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Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface
a
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Author keywords
ac conductance technique; metal oxide semiconductor interface; SiO2 SiC
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Indexed keywords
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EID: 51249162328
PISSN: 03615235
EISSN: 1543186X
Source Type: Journal
DOI: 10.1007/BF02659691 Document Type: Article |
Times cited : (153)
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References (27)
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