Tantalum-ruthenium dioxide as a diffusion barrier between Pt bottom electrode and TiSi2 ohmic contact layer for high density capacitors

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2544-2549

  Yoon, Dong Soo ^a   Baik, Hong Koo ^a   Lee, Sung Man ^b   Lee, Sang In ^c  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001044885     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371090     Document Type: Article

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