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Computational Materials Science

Volumn 12, Issue 4, 1998, Pages 319-332

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

(1) Caturla, Maria Jose a

a LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000954743 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(98)00024-X Document Type: Article

Times cited : (15)

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