Modeling silicon implantation damage and transient enhanced diffusion effects for silicon technology development

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 253-264

  Giles, Martin D ^a   Yu, Shaofeng ^a   Kennel, Harold W ^a   Packan, Paul A ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

SILICON IMPLANTATION DAMAGE;

SEMICONDUCTING SILICON;

EID: 0031333908     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-253     Document Type: Conference Paper

References (13)