Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 409-411

  Jaraiz, M ^a   Gilmer, G H ^a   Poate, J M ^a   De La Rubia, T D ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001499855     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116701     Document Type: Article

References (11)

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