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Volumn 70, Issue 2, 1997, Pages 176-178

Damage evolution and surface defect segregation in low-energy ion-implanted silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001483104     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118349     Document Type: Article
Times cited : (33)

References (15)
  • 4
    • 0000074641 scopus 로고    scopus 로고
    • edited by G. R. Srinivasan, C. S. Murthy, and S. T. Dunham Electrochemical Society, Pennington, New Jersey
    • U. Gösele, A. Plößl, and T. Y. Tan, Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, C. S. Murthy, and S. T. Dunham (Electrochemical Society, Pennington, New Jersey, 1996), p. 309.
    • (1996) Process Physics and Modeling in Semiconductor Technology , pp. 309
    • Gösele, U.1    Plößl, A.2    Tan, T.Y.3
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.