Physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 493-496

  Lilak, A D ^a   Earles, S K ^a   Jones, K S ^a   Law, M E ^a   Giles, M D ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DRIVEN CLUSTERING; PHYSICS BASED MODELING APPROACH; TRANSIENT ENHANCED DIFFUSION (TED);

ANNEALING; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTING BORON;

EID: 84886448102     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)