Radiation effects in silicon carbide: High energy cascades and damage accumulation at high temperature

Journal of Nuclear Materials

Volumn 233-237, Issue PART II, 1996, Pages 1096-1101

  Diaz De La Rubia T ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANISOTROPY; COMPUTER SIMULATION; CRYSTAL LATTICES; HEAT TRANSFER; MELTING; MOLECULAR DYNAMICS; RADIATION DAMAGE;

DAMAGE ACCUMULATION; TERSOFF POTENTIAL;

SILICON CARBIDE;

EID: 0030261712     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(96)00206-1     Document Type: Article

References (2)

1. G.R. Hopkins and J. Chin, J. Nucl. Mater. 141-143 (1986) 148.
2. F. Najmabadi and R.W. Conn, Fusion Technol. 21 (1992) 1721.