Modelling of extended defects in silicon

Materials Research Society Symposium - Proceedings

Volumn 439, Issue , 1997, Pages 3-10

  Law, M E ^a   Jones, K S ^a   Earles, S K ^a   Lilak, A D ^a   Xu, J W ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; SEMICONDUCTOR DOPING;

TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0030646622     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)