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Volumn 88, Issue 1, 2000, Pages 188-195

Kinetic, crystallographic, and optical studies of GaN and AlxGa1-xN thin films grown on Si(111) by pulsed reactive crossed-beam laser ablation using liquid alloys and N2 or NH3

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000733073     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373641     Document Type: Article
Times cited : (18)

References (41)
  • 22
    • 0002217382 scopus 로고
    • J. Karpinski, J. Jun, and S. Porowski, J. Cryst. Growth 66, 1 (1984); J. Karpinski and S. Porowski, J. Cryst. Growth 66, 11 (1984).
    • (1984) J. Cryst. Growth , vol.66 , pp. 11
    • Karpinski, J.1    Porowski, S.2
  • 27
    • 0004038250 scopus 로고
    • Addison-Wesley, Massachusetts
    • E. Hecht, Optics (Addison-Wesley, Massachusetts, 1987).
    • (1987) Optics
    • Hecht, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.