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Volumn 88, Issue 1, 2000, Pages 188-195

Kinetic, crystallographic, and optical studies of GaN and AlxGa1-xN thin films grown on Si(111) by pulsed reactive crossed-beam laser ablation using liquid alloys and N2 or NH3

(3) Willmott, P R a Antoni, F a Dobeli M b

a UNIVERSITY OF ZURICH (Switzerland)

b ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000733073 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373641 Document Type: Article

Times cited : (18)

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