Light emission moves into the blue

Physics World

Volumn 11, Issue 2, 1998, Pages 31-35

  Nakamura, Shuji ^a  

^a Nichia Chemical Industries   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342439260     PISSN: 09538585     EISSN: None     Source Type: Trade Journal    
DOI: 10.1088/2058-7058/11/2/31     Document Type: Article

References (9)

1. H Amano et al. 1989 P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI) Japan. J. Appl. Phys. 28 L2112
2. T Deguchi et al. 1997 Gain spectra in CW InGaN/GaN MQW laser diodes E-MRS (June 16-20, Strasbourg, France) L-XIII-3
3. S D Lester et al. 1995 High dislocation densities in high efficiency GaN-based light-emitting diodes Appl. Phys. Lett. 66 1249
4. S Nakamura et al. 1992 Hole compensation mechanism of p-type GaN films Japan. J. Appl. Phys. 311258
5. S Nakamura et al. 1995 Superbright green single-quantum-well-structure light-emitting diodes Japan. J. Appl. Phys. 34 L1332 S
6. S. Nakamura et al. 1997 High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes Japan. J. Appl. Phys. 36 L1059 S
7. S. Nakamura et al. 1997 InGaN/GaN/AIGaN-based laserdiodes with modulation-doped strained-layer superlattices Japan. J. Appl. Phys. 36 L1568
8. S Nakamura and G Fasol 1997 The Blue Laser Diode (Springer, Heidelberg)
9. S Nakamura and T Mukai 1992 High-quality InGaN films grown on GaN films Japan. J. Appl. Phys. 31L1457