Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 215-221

  Sudhir, G S ^a   Fujii, H ^a,d   Wong, W S ^a   Kisielowski, C ^b   Newman, N ^c   Dieker, C ^b   Liliental Weber, Z ^b   Rubin, M D ^b   Weber, E R ^a,b  

^a Lawrence Berkeley National Laboratory   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Northwestern University   (United States)

^d NEC CORPORATION   (Japan)

Author keywords

AlN; Doping; GaN; Lattice parameter; Pulsed laser deposition (PLD)

Indexed keywords

EID: 0041579891     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0390-y     Document Type: Article

References (16)

1. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, Vol.III/17a and 17d (Berlin: Springer Verlag, 1982 and 1984).
2. Properties of Group III Nitrides, ed. J.H. Edgar (London: INSPEC, Institution of Electrical Engineers, EMIS datareviews series, 11, c1994).
3. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
4. S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
5. S. Strite and J.H. Morkoç, Vac. Sci. Technol. B 10, 1237 (1992).
6. T. Sasaki and T. Matsuoka, J. Appl. Phys. 77, 192 (1995).
7. S. Yoshida, S. Misawa and S. Gonda, Appl. Phys. Lett. 42, 427 (1983).
8. A. Saxler, P. Kung, C.J. Sun and E. Bigan, Appl. Phys. Lett. 64, 339 (1994).
9. R.D. Vispute, H. Wu and J. Narayan, Appl. Phys. Lett. 67, 1549 (1995).
10. Pulsed Laser Deposition of Thin Films, ed. D.B. Chrisey and G.K. Hubler (New York: Wiley-Interscience, 1994).
11. W. Lin, L. Meng and G. Chen, Appl. Phys. Lett. 66, 2066 (1995).
12. G.A. Slack, J. Phys. Chem. Solids 34, 321 (1972).
13. Lagerstedt and B. Monemar, Phys. Rev. B 19, 3064 (1978).
14. CRC Handbook of Chemistry and Physics, ed. R.C. West (Cleveland, OH: CRC, 1974).
15. H. Fujii, C. Kisielowski, J. Krueger, M.S.H. Leung, R. Klockenbrink, M. Rubin and E.R. Weber, MRS Proc. 449, (Pittsburgh, PA: Mater. Res. Soc., 1996), p. 227.
16. T. Detchprohm, K. Hiramatsu, K. Itoh and I. Akasaki, Jpn. J. Appl. Phys. 31, L1454 (1992).