Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy

Applied Physics Letters

Volumn 72, Issue 24, 1998, Pages 3190-3192

  Grandjean, N ^a   Massies, J ^a   Leroux, M ^a   De Mierry, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001045121     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121589     Document Type: Article

References (19)

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